Radiation induced interface states in metal-aluminosilicate (Al2O3·SiO2) insulator-Si capacitors

Ishida, Makoto; Sakamoto, Hikaru; Shirotori, Haruo; Nakamura, Tetsuro
December 1987
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1937
Academic Journal
Aluminosilicate (Al2O3·SiO2) thin films were prepared on a (100) Si wafer by pyrolysis of Al(CH3)3, SiH4, and N2O gases at the deposition temperature of 850 °C. From the high-frequency and the quasi-static capacitance-voltage measurements, the initial interface state densities of capacitors with Al2O3·SiO2 gate insulators were 1.3–2.2×1011 cm-2 eV-1, and hysteresis characteristics were not present. Distribution of interface states of Al2O3·SiO2/Si was different from that of SiO2/Si. Even after exposure to 1×105 rads (Si) of Co60 γ-ray irradiation, the interface states were not affected. The interface state density showed a slight increase after exposure to 1×106 rads.


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