Degradation in GaAs/AlGaAs double-heterostructure light-emitting diodes

Ogawa, Junko; Tamamura, Kohshi; Akimoto, Katsuhiro; Mori, Yoshifumi
December 1987
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1949
Academic Journal
Degradation of GaAs/AlGaAs double-heterostructure light-emitting diodes under accelerated aging tests has been investigated through cathodoluminescence measurements. We observed an increase in intensity of the band-edge emission and a decrease in that of defect-related deep level emision for the cladding layers. As for the active layer, a decrease was observed in the intensity of the band-edge emission. These results suggest that defects migrate gradually from the cladding layer into the active layer.


Related Articles

  • Low-Threshold-Current 1.2�1.5�m Laser Diodes Based on AlInGaAs/InP Heterostructures. Slipchenko, S. O.; Lyutetskii, A. V.; Pikhtin, N. A.; Fetisova, N. V.; Leshko, A. Yu.; Ryaboshtan, Yu. A.; Golikova, E. G.; Tarasov, I. S. // Technical Physics Letters;Feb2003, Vol. 29 Issue 2, p115 

    Separate confinement AlInGaAs/InP multiwell laser heterostructures emitting in a wavelength range of 1.2-1.5 �m have been synthesized by metalorganic vapor-phase epitaxy. The threshold current of laser diodes with a strip width of 4.5 �m and a cavity length of 200 �m was as low as...

  • Monolithic integration of a laser diode and an optical waveguide modulator having a GaAs/AlGaAs quantum well double heterostructure. Tarucha, Seigo; Okamoto, Hiroshi // Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p1 

    This letter describes the monolithic integration of a laser diode and an optical waveguide modulator that have the same GaAs/AlGaAs quantum well double heterostructure grown on the same substrate. The intensity of the light emitted from the laser diode is modulated by the modulator, utilizing...

  • Effects of substrate polishing on double-heterostructure AlyGa1-yAs-AlxGa1-xAs lasers grown by molecular beam expitaxy. Caldwell, P. J.; Laidig, W. D.; Lin, Y. F.; Peng, C. K.; Magee, T. J.; Leung, C. // Journal of Applied Physics;2/1/1985, Vol. 57 Issue 3, p984 

    Presents a study which examined the relationship of the performance of a double-heterostructure (DH) laser with various polishing techniques used for gallium arsenide (GaAs) substrates preparation. Description of the process of polishing; Fabrication of broad-area laser diodes; Results for DH...

  • Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes. Kabanov, V.; Lebiadok, Ye.; Ryabtsev, G.; Smal, A.; Shchemelev, M.; Vinokurov, D.; Slipchenko, S.; Sokolova, Z.; Tarasov, I. // Semiconductors;Oct2012, Vol. 46 Issue 10, p1316 

    Recombination rates due to radiative and nonradiative processes and the rate of recombination induced by amplified luminescence have been determined for lasers based on an asymmetric InGaAs/GaAs/AlGaAs heterostructure with an ultrawide waveguide in the subthreshold region. It is shown that the...

  • Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surface. Windhorn, T. H.; Goodhue, W. D. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1675 

    Light emission normal to the surface of a GaAs/AlGaAs wafer has been obtained by fabricating edge-emitting double-heterostructure diode lasers with a monolithic 45° deflector adjacent to one of the laser facets. The deflector and adjacent facet were formed by ion beam assisted etching, while...

  • Photoelectric Properties of Planar Structures with Double Schottky Barrier Treated in a High-Vacuum Microwave Discharge. Ushakov, N. M.; Terent’ev, S. A.; Yafarov, R. K. // Technical Physics Letters;Aug2002, Vol. 28 Issue 8, p625 

    The state of the surface of n-GaAs crystals upon high-vacuum microwave plasmachemical (HVMWPC) etching in various gas mixtures and the influence of the semiconductor surface condition on the photoelectric characteristics of related metal-semiconductor-metal structures with double Schottky...

  • High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy. Kim, Jae-Hoon; Nouhi, Akbar; Radhakrishnan, Gouri; Liu, John K.; Lang, Robert J.; Katz, Joseph // Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1248 

    A high-peak-power low-threshold AlGaAs/GaAs double-heterostructure stripe laser diode on Si substrates grown by hybrid migration-enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest...

  • Al0.3Ga0.7As/Al0.05Ga0.95As light-emitting diodes on GaAs-coated Si substrates grown by liquid phase epitaxy. Sakai, Shiro; Chang, Shi S.; Ramaswamy, Ramu V.; Kim, Jae-Hoon; Radhakrishnan, Gouri; Liu, John K.; Katz, Joseph // Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1201 

    Al0.3Ga0.7As/Al0.05Ga0.95As double-heterostructure light-emitting diodes (LED’s) were successfully grown for the first time by liquid phase epitaxy on a GaAs-coated Si substrate that was prepared by a sequential process of migration-enhanced epitaxy and molecular beam epitaxy. The...

  • Multibarrier heterostructure GaAs/AlAs switch. Reklaitis, A. // Journal of Applied Physics;2/1/1999, Vol. 85 Issue 3, p2007 

    Presents information on a study which investigated a multibarrier heterostructure gallium arsenide/aluminum arsenide (GaAs/AlAs) current switching diode by Monte Carlo particle simulations. Details of the simulation; Calculation results; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics