Degradation in GaAs/AlGaAs double-heterostructure light-emitting diodes

Ogawa, Junko; Tamamura, Kohshi; Akimoto, Katsuhiro; Mori, Yoshifumi
December 1987
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1949
Academic Journal
Degradation of GaAs/AlGaAs double-heterostructure light-emitting diodes under accelerated aging tests has been investigated through cathodoluminescence measurements. We observed an increase in intensity of the band-edge emission and a decrease in that of defect-related deep level emision for the cladding layers. As for the active layer, a decrease was observed in the intensity of the band-edge emission. These results suggest that defects migrate gradually from the cladding layer into the active layer.


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