Growth and characterization of silicon molecular beam epilayers on GaP (111) substrates

Jiang, Weidong; Zhou, Guoliang; Chen, Keming; Sheng, Chi; Zhang, Xiangjiu; Wang, Xun
December 1987
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1910
Academic Journal
Silicon molecular beam epitaxy on thermally cleaned GaP(111) substrates has been prepared at 450 °C with the growth rate of 0.2 Å/s. The P segregation on the surface of Si epilayer beyond the thickness of 1500 Å has been observed. The surface of epilayer has the same (1×1) periodicity as that of the substrate when the thickness of the epilayer is less than 500 Å. Above 500 Å, the surface shows a (3×3) reconstruction. It is suggested that both (1×1) and (3×3) geometries are P-stabilized surface structures.


Related Articles

  • In situ real-time analysis of alloy film composition and segregation dynamics with parallel.... Ahn, C.C.; Yoshino, H. // Applied Physics Letters;11/3/1997, Vol. 71 Issue 18, p2653 

    Demonstrates the in situ real-time study of Ge[sub x]Si[sub 1-x]/Si(001) alloy film composition and tin/silicon(001) segregation dynamics in molecular beam epitaxy. Use of parallel detection reflection electron energy loss spectroscopy; Analysis of the tin (Sn) M[sub 4,5] core loss; Segregation...

  • Evidence of segregation in (100) strained Si1-xGex alloys grown at low temperature by molecular beam epitaxy. Croke, E. T.; McGill, T. C.; Hauenstein, R. J.; Miles, R. H. // Applied Physics Letters;1/22/1990, Vol. 56 Issue 4, p367 

    High quality, coherently strained Si1-xGex alloy layers are studied using high-resolution x-ray diffraction (HRXRD) and ex situ transmission electron diffraction. Several samples were grown at extremely low temperatures (310–330 °C) by molecular beam epitaxy. Sample thicknesses and...

  • Surface segregation determination by epitaxy temperature steps. Kasper, E.; Oehme, M. // Applied Physics Letters;6/12/2000, Vol. 76 Issue 24 

    A method for determination of surface segregation during molecular-beam epitaxy is proposed. At constant beam fluxes, the temperature is switched which causes a segregation-dependent doping profile. The segregation ratio is extracted from the integrated profile avoiding problems with limited...

  • GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy. Egorov, A. Yu.; Zhukov, A. E.; Kovsh, A. R.; Ustinov, V. M.; Mamutin, V. V.; Ivanov, S. V.; Zhmerik, V. N.; Tsatsul’nikov, A. F.; Bedarev, D. A.; Kop’ev, P. S. // Technical Physics Letters;Dec98, Vol. 24 Issue 12, p942 

    Molecular beam epitaxy was used to fabricate GaAsN/GaAs and InGaAsN/GaAs heterostructures, and the influence of the growth regimes on their characteristics was studied. It is shown that implantation of nitrogen causes a substantial long-wavelength shift of the radiation. The possibility of...

  • Molecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSe. Luo, H.; Samarth, N. // Applied Physics Letters;4/22/1991, Vol. 58 Issue 16, p1783 

    Studies the molecular beam epitaxy ZnTe/CdSe, a lattice-matched II-VI heterostructure. Quality of epilayers grown on ZnTe buffer layers; Photoluminescence; Optical transmission measurements; Valence-band offsets.

  • Optical and electrical properties of InP/InGaAs grown selectively on SiO[sub 2]-masked InP. Wang, Y.L.; Feygenson, A.; Hamm, R.A.; Ritter, D.; Weiner, J.S.; Temkin, H.; Panish, M.B. // Applied Physics Letters;7/22/1991, Vol. 59 Issue 4, p443 

    Reports on the selective growth of the heterostructures of InGaAs/InP through windows in SiO[sub 2]-masked InP substrates by metalorganic molecular beam epitaxy. Display of high cathdoluminescence efficiency; Observation of a red shift and reduced intensity; Occurrence of anomalous growth.

  • High quality (111)B GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a.... Chin, Albert; Martin, Paul; Pin Ho; Ballingall, Jim; Tan-Hua Yu; Mazurowski, John // Applied Physics Letters;10/7/1991, Vol. 59 Issue 15, p1899 

    Examines the molecular beam epitaxy of gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), AlGaAs/GaAs modulation doped heterostructures and a GaAs/indium gallium arsenide/GaAs quantum well. Determination of the electron mobility and sheet density.

  • Photoelectrochemical depth profiling of molecular beam epitaxy grown group III-V heterostructures. Wei, C.; Rajeshwar, K. // Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1348 

    Presents a depth profiling technique for molecular beam epitaxy grown group III-V heterostructures. Combination of photoelectrochemical layer-by-layer removal with analyses by photocurrent spectroscopy; Illustration of the technique in two types of samples; Simplification of the growth process.

  • Ga[sub 0.47]In[sub 0.53]As multiquantum well heterostructures, confined by pseudoquaternary.... Dotor, M.L.; Huertas, P.; Golmayo, D.; Briones, F. // Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p891 

    Develops a multiquantum well (MQW) heterostructures by pseudoquarternary short period superlattices lattice-matched to indium phosphide substrate. Growth of the sample by low-temperature atomic layer molecular beam epitaxy; Use of x-ray diffraction for structural quality assessment;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics