TITLE

Growth and characterization of silicon molecular beam epilayers on GaP (111) substrates

AUTHOR(S)
Jiang, Weidong; Zhou, Guoliang; Chen, Keming; Sheng, Chi; Zhang, Xiangjiu; Wang, Xun
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Silicon molecular beam epitaxy on thermally cleaned GaP(111) substrates has been prepared at 450 °C with the growth rate of 0.2 Å/s. The P segregation on the surface of Si epilayer beyond the thickness of 1500 Å has been observed. The surface of epilayer has the same (1×1) periodicity as that of the substrate when the thickness of the epilayer is less than 500 Å. Above 500 Å, the surface shows a (3×3) reconstruction. It is suggested that both (1×1) and (3×3) geometries are P-stabilized surface structures.
ACCESSION #
9825147

 

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