TITLE

Hydrogenated amorphous silicon prepared by ArF and F2 excimer laser-induced photochemical vapor deposition

AUTHOR(S)
Toyoshima, Yasutake; Kumata, Ken; Itoh, Uichi; Matsuda, Akihisa
PUB. DATE
December 1987
SOURCE
Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1925
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hydrogenated amorphous silicon (a-Si:H) films were prepared by laser-induced photochemical vapor deposition using ArF and F2 excimer lasers. Disilane (Si2H6) and trisilane (Si3H8) diluted with helium were used as the reaction gases for the ArF laser and monosilane (SiH4), disilane, and trisilane for the F2 laser. A good linear correlation was found between the estimate of deposition rate derived from gas phase photoabsorption and the observed deposition rate, indicating that one-photon process governs the film deposition rate. Density of excited molecules in the gas phase was found to be an important factor in controlling the film properties. Laser irradiation onto the growing surface also affects the film properties through a decrease in the hydrogen incorporated in the film.
ACCESSION #
9825145

 

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