TITLE

Semiconductor laser logic gate suitable for monolithic integration

AUTHOR(S)
Grande, W. J.; Tang, C. L.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1780
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new semiconductor laser optical logic gate based on quenching and capable of performing the not, nor, and nand functions is described. The device can be operated both pulsed and cw at room temperature. In addition, the new logic gate can be monolithically integrated.
ACCESSION #
9825133

 

Related Articles

  • Optical evaluation of an AlAs/AlGaAs visible Bragg reflector grown by chemical beam epitaxy. Armstrong, J.V.; Farrell, T. // Applied Physics Letters;12/7/1992, Vol. 61 Issue 23, p2770 

    Examines the aluminum arsenide/aluminum gallium arsenide optical visibility Bragg reflector grown through chemical beam epitaxy. Multilayer structure of aluminum arsenide/aluminum gallium arsenide; Evaluation of growth through dynamic optical reflectivity; Usage of the semiconductor diode laser.

  • Some problems of molecular beam epitaxy growth of epitaxial structures of semiconductor lasers for a 980 nm band. KOSMALA, MICHAL&; REGINSKI, KAZIMIERZ; KOSIEL, KAMIL // Optica Applicata;2005, Vol. 35 Issue 3, p399 

    The paper deals with selected problems of molecular beam epitaxy (MBE) technology of fabrication of 980-nm strained InGaAs quantum-well (QW) lasers. Special attention has been paid to the growth of active region of such lasers. Therefore, a certain method of optimisation of the growth process is...

  • MBE GROWN ZnSSe/ZnMgSSe MQW STRUCTURE FOR BLUE VCSEL. KAZAKOV, I. P.; KOZLOVSKY, V. I.; MARTOVITSKY, V. P.; SKASYRSKY, YA. K.; TIBERI, M. D.; ZABEZHAYLOV, A. O.; DIANOV, E. M. // International Journal of Nanoscience;Oct2007, Vol. 6 Issue 5, p407 

    ZnSSe/ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band gap of ZnMgSSe barriers was approximately 3 eV at room temperature. Cathodoluminescence, X-ray diffraction, optical, scanning electron beam, and atomic force microscopy were all used for structure...

  • Low threshold current density 1.3 µm InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy. Chang, F.Y.; Lee, J.D.; Lin, H.H. // Electronics Letters;2/5/2004, Vol. 40 Issue 3, p179 

    Reports that InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy. Ability of the laser to emit 1.296 micron light output; Demonstration of a very low threshold current density of 111 A/cm2; Lowest reported value of GaAs-based 1.3 micron quantum...

  • Patterned quantum well semiconductor laser arrays. Kapon, E.; Harbison, J. P.; Yun, C. P.; Florez, L. T. // Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p304 

    Low-threshold arrays of GaAs/AlGaAs patterned quantum well semiconductor lasers were grown by molecular beam epitaxy on periodically corrugated substrates. Uncoated arrays of ∼14 lasers operated with threshold curents of 3.6 mA per laser and emitted up to 375 mW from a single facet under...

  • Kinetic model of GaAs(100) growth from molecular beams. Karpov, S. Yu.; Maıorov, M. A. // Technical Physics Letters;Jan97, Vol. 23 Issue 1, p38 

    A kinetic model for the growth of GaAs(100) by molecular beam epitaxy is constructed. The elementary processes at the surface are analyzed, including chemisorption of atoms and molecules, incorporation of atoms into the crystal, decomposition of the crystal, and desorption of group-III atoms and...

  • Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy. Vilisova, M. D.; Ivonin, I. V.; Lavrentieva, L. G.; Subach, S. V.; Yakubenya, M. P.; Preobrazhenskiı, V. V.; Putyato, M. A.; Semyagin, B. R.; Bert, N. A.; Musikhin, Yu. G.; Chaldyshev, V. V. // Semiconductors;Aug99, Vol. 33 Issue 8, p824 

    This paper describes studies of InGaAs layers grown by molecular-beam epitaxy on InP (100) substrates at temperatures of 150-480 °C using various arsenic fluxes. It was found that lowering the epitaxy temperature leads to changes in the growth surface, trapping of excess arsenic, and an...

  • Measurements of Parameters of the Low-Temperature Molecular-Beam Epitaxy of GaAs. Preobrazhenskii, V.V.; Putyato, M.A.; Semyagin, B.R. // Semiconductors;Aug2002, Vol. 36 Issue 8, p837 

    Phase diagrams of GaAs (001) surface structures were used to calibrate sensors of the substrate temperature and As flux in molecular-beam epitaxy systems. The sublimation temperature of amorphous layers of As adsorbed on GaAs was measured. It was shown that this temperature is constant and does...

  • High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide. Matyi, R.J.; Melloch, M.R.; Woodall, J.M. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2642 

    Examines the structural properties of As-grown and annealed gallium arsenide grown at low temperature by molecular beam epitaxy. Establishment of the crystallographic quality of the gallium arsenide; Presence of the well-defined interference fringes; Increase in the apparent mosaic spread of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics