High-speed and high-power 1.3-μm InGaAsP buried crescent injection lasers with semi-insulating current blocking layers

Cheng, W. H.; Su, C. B.; Buehring, K. D.; Huang, S. Y.; Pooladdej, J.; Wolf, D.; Perrachione, D.; Renner, D.; Hess, K. L.; Zehr, S. W.
November 1987
Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1783
Academic Journal
The fabrication and performance of high-speed and high-power 1.3-μm InGaAsP buried crescent lasers with semi-insulating current blocking layers are reported. A modulation bandwidth of 11 GHz and acw output power of 42 mW/facet have been achieved. An approximate circuit model of the semi-insulating buried crescent laser, which describes the effect of dc bias on parasitic capacitance at high-speed operation, is also presented.


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