Neutron diffraction as a rapid screening method for semiconductor wafers

Martel, P.; Rogers, D.; Stephens, A. E.
November 1987
Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1795
Academic Journal
Measurements are presented which illustrate advantages of thermal neutron scattering for rapid screening of Si and GaAs semiconductor wafers. Regions of high dislocation density are found to cause localized decreases in extinction that are readily observable by a detector set to measure a diffracted beam with a cross-sectional area comparable to typical wafer areas. Significant variations in reflected intensity are found by scanning small beams across GaAs wafers. Comparisons are made with x-ray scattering techniques.


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