TITLE

Neutron diffraction as a rapid screening method for semiconductor wafers

AUTHOR(S)
Martel, P.; Rogers, D.; Stephens, A. E.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1795
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measurements are presented which illustrate advantages of thermal neutron scattering for rapid screening of Si and GaAs semiconductor wafers. Regions of high dislocation density are found to cause localized decreases in extinction that are readily observable by a detector set to measure a diffracted beam with a cross-sectional area comparable to typical wafer areas. Significant variations in reflected intensity are found by scanning small beams across GaAs wafers. Comparisons are made with x-ray scattering techniques.
ACCESSION #
9825123

 

Related Articles

  • Self-Assembled Local Artificial Substrates of GaAs on Si Substrate. Bietti, S.; Somaschini, C.; Koguchi, N.; Frigeri, C.; Sanguinetti, S. // Nanoscale Research Letters;Dec2010, Vol. 5 Issue 12, p1905 

    We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 10 to 10 cm. The islands...

  • Electrical characterization of GaAs metal bonded to Si. Bickford, Justin R.; Qiao, D.; Yu, P. K. L.; Lau, S. S. // Applied Physics Letters;7/3/2006, Vol. 89 Issue 1, p012106 

    Wafer bonding has traditionally focused on producing either insulating or nonlinear heterostructure interfaces; low-resistance Ohmic interfaces would offer the advantage of more efficient current delivery. In this study, doped GaAs was bonded to doped Si using indium and palladium interlayers....

  • Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAs. Wagner, J.; Seelewind, H.; Kaufmann, U. // Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1054 

    Electronic Raman scattering has been employed to characterize as-grown semi-insulating GaAs. All samples investigated exhibit electronic Raman signals from residual acceptors (carbon and/or zinc). The intensity of these signals varies by more than one order of magnitude from sample to sample....

  • GaAs/GaP wafer and epitaxy market revenues to increase 50% by 2001.  // Lightwave;Nov97, Vol. 14 Issue 12, p86 

    Reports on the results of a study of gallium arsenide and gallium phosphide semiconductor wafers conducted by Strategies Unlimited in 1997. Projected growth of the worldwide market from gallium arsenide and gallium phosphide wafers and epitaxy; Sales growth; Contact information.

  • US Air Force Lab develops defect analysis for GaAs. Demmin, Jeffrey C. // Solid State Technology;Jan2001, Vol. 44 Issue 1, p28 

    Reports on the development of an automated method for calculating defect density on gallium arsenide (GaAs) semiconductor wafers at the United States Air Force Research Laboratory at the Wright Patterson Air Force Base in Ohio. Factors affecting the performance of GaAs devices; Method of...

  • New quantitative line scanning technique for homogeneity assessment of semi-insulating GaAs wafers. Windscheif, J.; Baeumler, M.; Kaufmann, U. // Applied Physics Letters;4/1/1985, Vol. 46 Issue 7, p661 

    A new technique for recording spatial fluctuations of the optical absorption in GaAs slices is reported. It is based on a commercially available linear silicon diode array which monitors the optical absorption attributed to the omnipresent deep trap named EL2. Because this technique gives...

  • Effect of metallization on crystalline perfection and level of stress in semi-insulating and n-type gallium arsenide single-crystal wafers. Lal, Krishan; Niranjana, S.; Goswami, N.; Würfl, Joachim; Hartnagel, H. L. // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p4105 

    Presents a study that evaluated the effects of metallization on the crystalline perfection and stress level in gallium arsenide (GaAs) semiconductor wafers. Methodology; Analysis of the optimization of nearly stress-free specimen mounting; Examination of the crystalline perfection of...

  • Highly uniform ion implants into GaAs by wafer rotation. Uchitomi, Naotaka; Mikami, Hitoshi; Toyoda, Nobuyuki // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p4042 

    Presents a study that investigated the influence of wafer rotation on ion implanted dose uniformity in gallium arsenide semiconductor wafers. Kinds of rotating ion implantations; Examination of the dose distribution of the ion implants; Methodology.

  • Photoreflectance study of gallium arsenide grown on Si. Dutta, M.; Shen, H.; Vernon, S. M.; Dixon, T. M. // Applied Physics Letters;10/22/1990, Vol. 57 Issue 17, p1775 

    Low-temperature linear polarized photoreflectance is used to study the stress and its release in thick GaAs grown on Si. We find that the GaAs layer is mainly composed of two regions with two kinds of stress, biaxial and uniaxial. Four features, two from each region due to the split valence...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics