New approach to growth of high-quality GaAs layers on Si substrates

Varrio, J.; Asonen, H.; Salokatve, A.; Pessa, M.; Rauhala, E.; Keinonen, J.
November 1987
Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1801
Academic Journal
GaAs films were grown by molecular beam epitaxy (MBE) on Si (100) substrates using a two-step growth process of a 300 °C GaAs buffer layer followed by a 600 °C device layer. The films were examined by Rutherford backscattering and x-ray diffraction methods. A significant reduction in the defect density near the GaAs/Si interface and in the bulk of these films was observed when the buffer layer was deposited by alternately supplying Ga atoms and As4 molecules to the substrate, rather than applying conventional MBE. Possible reasons for this reduction of crystal defects are discussed.


Related Articles

  • Molecular beam epitaxy of GaAs on Si-on-insulator. Wenhua Zhu; Yuehi Yu; Chenglu Lin; Aizhen Li; Shichang Zou; Hemment, P.L.F. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p210 

    Investigates the growth of gallium arsenide films on silicon-on-insulator by molecular beam epitaxy. Use of Rutherford backscattering and x-ray double-crystal diffraction; Relation between crystal quality and film thickness; Determination of the refractive index profiles.

  • Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1-xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate. Hoenk, Michael E.; Chen, Howard Z.; Yariv, Amnon; Morkoç, Hadis; Vahala, Kerry J. // Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1347 

    Cathodoluminescence scanning electron microscopy is used to study AlxGa1-x As epilayers grown on a nonplanar substrate by molecular beam epitaxy. Grooves parallel to the [011] direction were etched in an undoped GaAs substrate. Growth on such grooves proceeds on particular facet planes. We find...

  • Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe. Rajakarunanayake, Y.; Cole, B. H.; McCaldin, J. O.; Chow, D. H.; Söderström, J. R.; McGill, T. C.; Jones, C. M. // Applied Physics Letters;9/18/1989, Vol. 55 Issue 12, p1217 

    We report the successful growth of ZnTe on nearly lattice-matched III-V buffer layers of InAs (0.75%), GaSb (0.15%), and on GaAs and ZnTe by molecular beam epitaxy. In situ reflection high-energy electron diffraction measurements showed the characteristic streak patterns indicative of...

  • Effect of in situ and ex situ annealing on dislocations in GaAs on Si substrates. Choi, C.; Otsuka, N.; Munns, G.; Houdre, R.; Morkoç, H.; Zhang, S. L.; Levi, D.; Klein, M. V. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p992 

    Gallium arsenide layers grown by molecular beam epitaxy on (100) Si substrates were subjected to annealing under As overpressure at 650, 750, and 850 °C for 1/2 h. A substantial reduction in the dislocation density near the interface and in the bulk of the epitaxial layers was observed for...

  • Microstructural characterization of patterned gallium arsenide grown on <001> silicon substrates. Matyi, R. J.; Shichijo, H.; Moore, T. M.; Tsai, H-L. // Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p18 

    The microstructure of patterned GaAs grown on Si substrates by molecular beam epitaxy has been examined with both transmission and scanning electron microscopies. The GaAs was found to be single crystal with excellent morphology to the limit of the plasma oxide defining mask. In samples where...

  • Investigation of Distribution and Redistribution of Silicon in Thin Doped Gallium-Arsenide Layers Grown by Molecular Beam Epitaxy on Substrates with (100), (111)Ga, and (111)As Orientations. Galiev, G. B.; Kaminskii, V. �.; Mokerov, V. G.; Nevolin, V. K.; Saraikin, V. V.; Slepnev, Yu. V. // Semiconductors;Jul2000, Vol. 34 Issue 7, p741 

    The distribution of silicon in GaAs was investigated by secondary-ion mass spectrometry (SIMS) before and after the thermal annealing of thin doped GaAs layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations. The surface relief pattern of the grown...

  • Si diffusion and segregation in low-temperature grown GaAs. Kavanagh, K.L.; Chang, J.C.P.; Kirchner, P.D.; Warren, A.C.; Woodall, J.M. // Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p286 

    Investigates the silicon (Si)-doped low-temperature gallium arsenide (LT-GaAs) semiconductors by molecular beam epitaxy. Use of constant diffusion coefficients; Development of internal Si peaks; Accumulation of As precipitates near the undoped/doped LT-GaAs interface.

  • Highly doped GaAs:Si by molecular beam epitaxy. Sacks, Robert; Shen, H. // Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p374 

    Highly doped (N[sup ++]) GaAs:Si with n up to 1.8 × l0[sup 19] cm[sup -3] has been grown by molecular beam epitaxy at a "normal" growth rate of ∼0.8 m/h[sup -1]. These layers have been studied by Raman spectroscopy, van der Pauw-Hall measurements, and capacitance-voltage plotting. They...

  • Photoreflectance measurements on Si δ-doped GaAs samples grown by molecular-beam epitaxy. Bernussi, A. A.; Iikawa, F.; Motisuke, P.; Basmaji, P.; Li, M. Siu; Hipolito, O. // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p4149 

    Presents a study that investigated silicon σ-doped gallium arsenide semiconductors grown by molecular beam epitaxy. Analysis of the photoreflectance spectra of the samples; Effect of silicon dopant concentration on the energy position of the samples; Examination of the temperature dependence...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics