Molecular beam epitaxial growth of CoSi2 on porous Si

Kao, Y. C.; Wang, K. L.; Wu, B. J.; Lin, T. L.; Nieh, C. W.; Jamieson, D.; Bai, G.
November 1987
Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1809
Academic Journal
CoSi2 epitaxial layers with different thicknesses have been grown onto porous-Si substrates by molecular beam epitaxy. Good crystallinity is obtained for CoSi2 films thicker than 50 nm. The use of a thin buffer layer is found to be crucial in order to achieve abrupt interface and good crystallinity. Planar view transmission electron microscope images obtained from 30-nm-thick CoSi2 buffer-Si/porous-Si samples indicate that a large area of the epitaxial film is dislocation free, in contrast with a uniform distribution of misfit dislocations across relaxed CoSi2/single-crystal Si samples of the same thickness. This study suggests a possible pseudomorphic growth by using porous Si as a substrate.


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