TITLE

Inverted surface effect of p-type HgCdTe

AUTHOR(S)
Chen, M. C.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1836
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
By surface passivation using anodic sulfidization, we demonstrated that the inverted surface effect which gives rise to negative Hall coefficients commonly measured in p-type HgCdTe at low temperatures can be eliminated. Our results of Hall measurements as a function of magnetic field at 77 K and computer simulations allow us to distinguish two different existing models (with shunting or nonshunting n-type inversion layer) of the inverted surface effect. Bulk and surface transport parameters such as hole concentration, hole mobility, surface electron concentration, and surface electron mobility have been derived from computer best fits of experimental Hall coefficient curves.
ACCESSION #
9825090

 

Related Articles

  • Intrinsic carrier concentration of narrow-gap mercury cadmium telluride based on the nonlinear temperature dependence of the band gap. Lowney, J. R.; Seiler, D. G.; Littler, C. L.; Yoon, I. T. // Journal of Applied Physics;2/1/1992, Vol. 71 Issue 3, p1253 

    Presents a study that examined the intrinsic carrier concentration of narrow-gap mercury cadmium telluride based on the nonlinear temperature dependence of the band gap. Details of the experiment; Theory used in the study; Results and discussion.

  • Resonant Raman studies of structural ordering in Hg1-xCdxTe: Dependence on growth conditions. Compaan, A.; Bowman, R. C.; Cooper, D. E. // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p1055 

    Resonant Raman scattering with photon energies between 2.35 and 2.7 eV has been used to study both the alloy composition and local structural order in Hg1-xCdxTe for x values near 0.25 and for samples prepared by bulk growth, liquid phase epitaxy, molecular beam epitaxy, and metalorganic...

  • Quantum Hall effect in the bulk semiconductors bismuth and antimony tellurides: proof of the existence of a current-carrier reservoir. Kul’bachinskiı, V. A.; Kaminskiı, A. Yu.; Miyajima, N.; Sasaki, M.; Negishi, H.; Inoue, M.; Kadomatsu, H. // JETP Letters;12/10/99, Vol. 70 Issue 11, p767 

    The quantization of the Hall resistivity ρ[sub xy] in the form of plateaus in the dependence of ρ[sub xy] on the magnetic field B is observed in the semiconductors Bi[sub 2]Te[sub 3] and Sb[sub 2]Te[sub 3]; the minima of the transverse magnetoresistivity ρ[sub xx] correspond to the...

  • Epitaxial growth of HgTe by precracking metalorganic mercury and tellurium compounds. Wang, C.-H.; Lu, P.-Y.; Williams, L. M. // Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1085 

    Diethyltelluride and dimethylmercury metalorganic sources were precracked for the expitaxial growth of HgTe on CdTe substrates. This method allows metalorganic sources to be decomposed at one temperature while epitaxial growth occurs at a different temperature that is lower. Therefore, the HgTe...

  • HgTe-CdTe double barrier tunneling structures. Schulman, J. N.; Anderson, C. L. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1684 

    Double barrier heterostructures consisting of HgTe-CdTe-HgTe-CdTe-HgTe layers are proposed as providing improved negative differential resistance current-voltage characteristics as compared with similar devices based on the GaAs-GaAlAs system. The small HgTe-CdTe valence-band offset and the...

  • Growth and characterization of Hg1-xMnxTe grown by molecular beam epitaxy. Reno, J.; Sou, I. K.; Wijewarnasuriya, P. S.; Faurie, J. P. // Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1168 

    Growth of Hg1-xMnxTe epilayers by molecular beam epitaxy is reported here for the first time. The layers were grown on both CdTe(111) and GaAs(100) substrates. Hall measurements and electron diffraction experiments confirm their high quality. Both n-type and p-type layers were grown. The layers...

  • Effect of inhomogeneities of Bi[sub 2]T[sub 3] crystals on the transverse Nernst—Ettingshausen effect. Zhitinskaya, M. K.; Nemov, S. A.; Svechnikova, T. E. // Semiconductors;Apr97, Vol. 31 Issue 4, p375 

    The effect of inhomogeneities in p-Bi[sub 2]Te[sub 3] crystals, grown by different methods, on the coefficients of the transverse Nernst-Ettingshausen and Hall effects has been studied. The degree of homogeneity of the crystals was estimated on the basis of thermo-emf (Seebeck coefficient) data....

  • Anomalous Hall effect in polycrystalline HgTe. Nath, Tirlok; Roy, Savita; Saxena, P.; Mathur, P. C. // Journal of Applied Physics;10/1/1990, Vol. 68 Issue 7, p3723 

    Reports on the anomalous Hall effect and nonuniformities introduced by aging in the bulk polycrystalline mercury telluride (HgTe). Characteristics of HgTe; Discussion on anomalous Hall effects; Method used in growing HgTe samples; Evaluation of the Hall coefficient and mobility.

  • Metastable state of the CdTe-HgTe system. Vigdorovich, E. // Semiconductors;Dec2014, Vol. 48 Issue 13, p1697 

    Using classical concepts of the theory of solutions, the fields of stability of CdHgTe solid solutions are determined in a wide composition range.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics