TITLE

Electron-hole recombination lifetimes in a quasi-zero-dimensional electron system in CdSxSe1-x

AUTHOR(S)
Shum, Kai; Tang, G. C.; Junnarkar, Mahesh R.; Alfano, R. R.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1839
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The recombination lifetimes for the radial and angular quantum number conserved 1S–1S and 1P–1P transitions from three-dimensionally confined electrons in CdSxSe1-x were measured by time-resolved photoluminescence (PL). The assignment of the observed transitions was supported by calculations of eigen energy levels and squared matrix element ratio for these transitions as well as well-resolved PL peaks arising from 1S–1S and 1P–1P transitions.
ACCESSION #
9825087

 

Related Articles

  • Spatially resolved photoluminescence mapping of single CdS nanosheets. Rho, H.; Lee, K.-Y.; Hoang, T. B.; Titova, L. V.; Mishra, A.; Smith, L. M.; Jackson, H. E.; Yarrison-Rice, J. M.; Choi, Y.-J.; Choi, K. J.; Park, J.-G. // Applied Physics Letters;1/7/2008, Vol. 92 Issue 1, p013111 

    We have utilized spatially resolved low temperature photoluminescence to probe the electronic states and structural symmetries of individual single crystalline CdS nanosheets. Spatially resolved photoluminescence imaging of a single CdS nanosheet reveals a distinctive spectral variation across...

  • Picosecond carrier recombination dynamics of semiconductor-doped glasses. Hsu, S. C.; Kwok, H. S. // Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1782 

    The carrier recombination dynamics of CdSxSe1-x-doped color glasses under strong pumping conditions were studied with 20 ps dye laser pulses and a white light continuum. The initial blue shift of the absorption spectrum was followed by a fast coherent transient and a slower decay. The results...

  • Effects of reactive versus unreactive metals on the surface recombination velocity at CdS and CdSe(1120) interfaces. Rosenwaks, Y.; Burstein, L.; Shapira, Y.; Huppert, D. // Applied Physics Letters;7/30/1990, Vol. 57 Issue 5, p458 

    Direct measurements of the surface recombination velocity (SRV) on etched CdS(1120), CdSe(1120) and at their interfaces with various metal ions and metals (deposited by electrolyte aqueous solutions and in situ thermal evaporation, respectively) have been performed using ultrafast time-resolved...

  • Spatially direct charged exciton photoluminescence in undoped ZnSe/BeTe type-II quantum wells. Ji, Z. W.; Takeyama, S.; Mino, H.; Oto, K.; Muro, K.; Akimoto, R. // Applied Physics Letters;3/3/2008, Vol. 92 Issue 9, p093107 

    Photoluminescence (PL) spectra occurred as a spatially direct optical transition inside of the ZnSe layer in undoped ZnSe/BeTe/ZnSe type-II quantum structures have been studied. We have found that the charged exciton transition was observed at the lower energy side of the exciton transition in...

  • A proposed mechanism for radiative recombination through surface states on InP. Lester, S. D.; Kim, T. S.; Streetman, B. G. // Journal of Applied Physics;10/1/1987, Vol. 62 Issue 7, p2950 

    Presents a study that examined recombination involving radiative surface states on InP semiconductors by low-temperature photoluminescence. Background on surface states on InP; Analysis of the peak emission energy; Results and implications.

  • Physical Properties of Semi-Insulating CdTe:Cl Single Crystals Grown from the Vapor Phase. Popovich, V. D.; Grigorovich, G. M.; Peleshchak, P. M.; Tkachuk, P. N. // Semiconductors;Jun2002, Vol. 36 Issue 6, p636 

    A vapor phase method for the growth of high-resistivity CdTe:Cl single crystals is described. The photoluminescence spectra of these crystals are studied as a function of the dopant content. The energy level position which determines the conductivity of these single crystals was determined from...

  • 1.4-eV photoluminescence and thermally stimulated conductivity in cadmium telluride. Cotal, H. L.; Lewandowski, A. C.; Markey, B. G.; McKeever, S. W. S.; Cantwell, E.; Aldridge, J. // Journal of Applied Physics;1/15/1990, Vol. 67 Issue 2, p975 

    Presents the photoluminescence (PL) and thermally stimulated conductivity data on high-resistivity, p-type cadmium tellurium (CdTe) single crystals. Determination of latter impurity contents; Effects of etching on the PL signal from an undoped CdTe sample; Results of a thermal quenching...

  • Photoluminescence investigations of Cd1-xMnxTe under hydrostatic pressure. Jiang, S.; Shen, S. C.; Li, G. H. // Journal of Applied Physics;8/1/1992, Vol. 72 Issue 3, p1070 

    Presents a study that examined the pressure coefficients of photoluminescence bands cadmium-manganese-tellurium (CdMnTe). Diagram of band structure and transitions for CdMnTe; Information on CdMnTe semimagnetic semiconductors.

  • Mapping emissive channels of quantum dots: Influence of size and environment on energy transfer in the time domain. Faulques, E.; Massuyeau, F.; Wang, Q.; Seo, D.-K.; Jobic, S. // Applied Physics Letters;10/11/2010, Vol. 97 Issue 15, p153111 

    In the quantum confinement regime, the time-resolved photoluminescence mapping of CdSe nanocrystals reveals unusual size-dependent characteristics in solute or solid-state environments. The former case typifies long-lived intradot exciton recombinations, while in the latter energy-dependent...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics