TITLE

Trap generation and occupation in stressed gate oxides under spatially variable oxide electric field

AUTHOR(S)
Avni, E.; Shappir, J.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1857
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The spatial variation of the oxide field in metal-oxide-silicon devices due to charge trapping under electron injection stress is included in a self-consistent trapping model. The model predicts the spatial distribution of the stress-generated trapping sites and their occupation level under different conditions of applied voltages and total injected charge. The calculated results agree quite well with the experimental results of prolonged charge injection, as expressed in shifts of the flatband voltage.
ACCESSION #
9825077

 

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