TITLE

New fabrication method for 1.3-μm GaInAsP/InP buried crescent lasers using a reactive ion beam etching technique

AUTHOR(S)
Kasukawa, Akihiko; Iwase, Masayuki; Hiratani, Yuji; Matsumoto, Narihito; Ikegami, Yoshikazu; Irikawa, Michinori; Kashiwa, Susumu
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1774
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A 1.3-μm GaInAsP/InP buried crescent laser on a p-type InP substrate was demonstrated. An active region width narrower than 1.5 μm was achieved with good controllability and reproducibility using the newly introduced reactive ion beam etching technique for the etching process. Stable fundamental transverse mode operation with low threshold currents of 15–25 mA was obtained. Less than 5% degradation in threshold current at 50 °C was achieved with a constant driving current of 150 mA at 70 °C for 100 h.
ACCESSION #
9825066

 

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