TITLE

New fabrication method for 1.3-μm GaInAsP/InP buried crescent lasers using a reactive ion beam etching technique

AUTHOR(S)
Kasukawa, Akihiko; Iwase, Masayuki; Hiratani, Yuji; Matsumoto, Narihito; Ikegami, Yoshikazu; Irikawa, Michinori; Kashiwa, Susumu
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1774
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A 1.3-μm GaInAsP/InP buried crescent laser on a p-type InP substrate was demonstrated. An active region width narrower than 1.5 μm was achieved with good controllability and reproducibility using the newly introduced reactive ion beam etching technique for the etching process. Stable fundamental transverse mode operation with low threshold currents of 15–25 mA was obtained. Less than 5% degradation in threshold current at 50 °C was achieved with a constant driving current of 150 mA at 70 °C for 100 h.
ACCESSION #
9825066

 

Related Articles

  • Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch-stop layer. Tanaka, T.; Minagawa, S.; Kajimura, T. // Applied Physics Letters;4/10/1989, Vol. 54 Issue 15, p1391 

    Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers fabricated using a thin GaAs layer as an etch stop are reproducibly realized. The ridge stripe structure is fabricated utilizing the large difference in etching rates between GaAs/AlGaAs and AlGaInP layers. As a result, the...

  • Linewidth-narrowed distributed feedback injection lasers with long cavity length and detuned Bragg wavelength. Liou, K.-Y.; Dutta, N. K.; Burrus, C. A. // Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p489 

    We report linewidth narrowing for 1.3-μm InGaAsP distributed feedback lasers with either a long cavity length or a detuned Bragg wavelength. The narrowest linewidth measured was 3 MHz at 6 mW for a 780-μm long-cavity laser, and was 8 MHz at 5.5 mW for a 250-μm regular-length laser with...

  • Room-temperature photopumped operation of an InGaAs-InP vertical cavity surface-emitting laser. Deppe, D. G.; Singh, S.; Dupuis, R. D.; Gerrard, N. D.; Zydzik, G. J.; van der Ziel, J. P.; Green, C. A.; Pinzone, C. J. // Applied Physics Letters;5/28/1990, Vol. 56 Issue 22, p2172 

    Data are presented demonstrating the room-temperature operation of an InP-InGaAs vertical cavity surface-emitting laser. The laser structure has an active region consisting of a 2-μm-thick bulk InGaAs layer and has an emission wavelength of 1.65 μm. Both the front and rear mirrors consist...

  • Maskless laser interferometric monitoring of InP/InGaAsP heterostructure reactive ion etching. Hayes, Todd R.; Heimann, P. A.; Donnelly, V. M.; Strege, K. E. // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2817 

    Infrared laser interferometry is used to measure etch rate, measure wafer temperature, and identify heterostructure layers in situ during reactive ion etching, with or without masked regions. Interference between reflections from the etching wafer surface, buried heterointerfaces, and polished...

  • Dependence of the conduction in In0.53Ga0.47As-InP double-barrier tunneling structures on the mesa-etching process. Vuong, T. H. H.; Tsui, D. C.; Tsang, W. T. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p1004 

    Measurements of the current-voltage curves of several In0.53Ga0.47As-InP double-barrier tunneling structures are presented as a function of the etching process used. It is shown that the large nontunneling leakage current previously observed in devices etched with the HBr:H3PO4:K2Cr2O7 solution...

  • Selective dry etching of InGaAs and InP over AlInAs in CH4/H2/SF6. Pearton, S. J.; Hobson, W. S. // Applied Physics Letters;5/28/1990, Vol. 56 Issue 22, p2186 

    The addition of SF6 to CH4/H2 discharges is shown to produce a significant increase in the selectivity for dry etching of both InGaAs and InP over AlInAs. The selectivity is a strong function of the dc bias on the sample during the reactive ion etching, with equirate removal of InGaAs and AlInAs...

  • Modeling of integrated extended cavity InP/InGaAsP semiconductor modelocked ring lasers. Bente, Erwin A. J. M.; Barbarin, Yohan; Heck, Martijn J. R.; Smit, Meint K. // Optical & Quantum Electronics;Feb2008, Vol. 40 Issue 2-4, p131 

    In this paper a model and simulation results of integrated semiconductor passively modelocked ring lasers are presented. The model includes nonlinear effects such as two-photon absorption and a non-linear refractive index, a logarithmic gain-carrier relation, and concentration dependent...

  • Large monolithic two-dimensional arrays of GaInAsP/InP surface-emitting lasers. Liau, Z. L.; Walpole, J. N. // Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p528 

    A 1 mm×3 mm monolithic two-dimensional array (incoherent) of 112 mass-transported buried-heterostructure lasers with integrated beam deflectors has been fabricated with good uniformity. An average cw output of 14 mW per laser and an average optical flux of 57 W/cm2 have been obtained when...

  • Homogeneous gain saturation in 1.5 μm InGaAsP traveling-wave semiconductor laser amplifiers. Mukai, Takaaki; Inoue, Kyo; Saitoh, Tadashi // Applied Physics Letters;8/10/1987, Vol. 51 Issue 6, p381 

    Spectral line broadening in semiconductor lasers is studied experimentally through the gain saturation characteristics of 1.5 μm InGaAsP traveling-wave laser amplifiers. Wide signal gain spectrum under the injection of an intense saturating signal is measured using a weak probe signal. The...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics