TITLE

Photoemission oscillations during epitaxial growth

AUTHOR(S)
Eckstein, J. N.; Webb, C.; Weng, S.-L.; Bertness, K. A.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1833
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the use of in situ, near-threshold photoemission to study the dynamics of GaAs surfaces during epitaxial crystal growth and, in particular, the observation of oscillations in the photoemitted current. These oscillations are found to depend upon the growth rate in the same manner as do reflecting high-energy electron diffraction intensity oscillations, occurring at the monolayer accumulation rate. We believe that they depend upon a cyclical variation in the step edge density on the growing surface and discuss the mechanism through which the oscillatory current may result from surface states or surface dipoles.
ACCESSION #
9825054

 

Related Articles

  • Atomic layer epitaxy of GaAs using nitrogen carrier gas. Yokoyama, Haruki; Shinohara, Masanori; Inoue, Naohisa // Applied Physics Letters;10/21/1991, Vol. 59 Issue 17, p2148 

    Examines the atomic layer epitaxy of gallium arsenide using nitrogen carrier gas. Comparison with the temperature range of hydrogen carrier gas; Effect of nitrogen carrier gas on trimethylgallium decomposition; Use of surface profiler for layer thickness measurement.

  • Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy. Doi, Atsutoshi; Aoyagi, Yoshinobu; Namba, Susumu // Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p785 

    Growth of GaAs by repeated deposition of single atomic layers using the switched laser metalorganic vapor phase epitaxy technique is reported. Suspension of Ga deposition at 100% coverage is an essential part of the growth mechanism for stepwise epitaxy—the ideal atomic layer epitaxy....

  • New approach to the atomic layer epitaxy of GaAs using a fast gas stream. Ozeki, M.; Mochizuki, K.; Ohtsuka, N.; Kodama, K. // Applied Physics Letters;10/17/1988, Vol. 53 Issue 16, p1509 

    A new growth method has been developed for the atomic layer epitaxy of GaAs. The gas system was based on a conventional metalorganic vapor phase epitaxial system but the decomposition of methylgallium was suppressed in the stagnant layer by using a fast pulsed gas stream from a jet nozzle. The...

  • Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs. Kuech, T. F.; Tischler, M. A.; Potemski, R. // Applied Physics Letters;3/6/1989, Vol. 54 Issue 10, p910 

    The selective epitaxy of GaAs was demonstrated in the metalorganic vapor phase epitaxy of GaAs utilizing diethylgallium chloride [Ga(C2H5)2Cl] and AsH3. No GaAs will deposit on SiO2, Si3N4, or SiONx under normal growth conditions, i.e., 600–800 °C at 0.1 atm reactor pressure. Unlike...

  • Ion channeling, high resolution x-ray diffraction and Raman spectroscopy in strained quantum wells. Siddiqui, Azher M.; Rao, S. V. S. Nageswara; Pathak, Anand P.; Kulkarni, V. N.; Murthy, R. Keshav; Williams, Eric; Ila, Daryush; Muntele, Claudiu; Chandrasekaran, K. S.; Arora, B. M. // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    InGaAs strained epitaxial layers on GaAs are of considerable interest in semiconductor devices. An important feature is the critical thickness of the epitaxial layer beyond which relaxation occurs, affecting the device performance. With this in view, a series of such structures have been grown...

  • Optical detection of growth oscillations in high vacuum metalorganic vapor phase epitaxy. Jönsson, J.; Deppert, K.; Jeppesen, S.; Paulsson, G.; Samuelson, L.; Schmidt, P. // Applied Physics Letters;6/11/1990, Vol. 56 Issue 24, p2414 

    We report the first measurements of growth oscillations in high vacuum metalorganic vapor phase epitaxy (MOVPE). The reflection difference response of the surface is used for real-time monitoring of the layer-by-layer growth of GaAs from triethylgallium (TEG) and arsine. The frequency of the...

  • Formation of the interface between GaAs and Si: Implications for GaAs-on-Si heteroepitaxy. Bringans, R. D.; Olmstead, Marjorie A.; Uhrberg, R. I. G.; Bachrach, R. Z. // Applied Physics Letters;8/17/1987, Vol. 51 Issue 7, p523 

    Results of photoemission core-level spectroscopy measurements for coverages of around one monolayer of As, Ga, and GaAs on Si substrates are presented. The interfaces were formed on on-axis Si(100) and Si(111) substrates using molecular beam epitaxy techniques. The bonding between As and the...

  • Selective-area epitaxial growth of gallium arsenide on silicon substrates patterned using a scanning tunneling microscope operating in air. Dagata, J. A.; Tseng, W.; Bennett, J.; Evans, C. J.; Schneir, J.; Harary, H. H. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2437 

    Selective-area epitaxial growth of gallium arsenide on n-Si(100) substrates is reported, where the oxide (SiOx) mask consists of 1–2 monolayer-thick features patterned onto a silicon substrate using a scanning tunneling microscope (STM) operating in air. The technique for generating the...

  • Ga1-xAlxAs purification during its liquid phase epitaxial growth in the presence of Yb. Raczynska, J.; Fronc, K.; Langer, J. M.; Lischka, K.; Pesek, A. // Applied Physics Letters;2/20/1989, Vol. 54 Issue 8, p700 

    The influence of Yb added to the melt, on the near-band-gap emission of Ga1-xAlxAs grown by liquid phase epitaxy, is reported. No characteristic Yb3+ emission is found, but a pronounced narrowing of the bound-exciton spectrum is observed for Yb concentrations in the Ga melt below 100 ppm. A...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics