TITLE

GaAlAs gain-guided semiconductor lasers with a curved facet

AUTHOR(S)
Yamashita, S.; Nakatsuka, S.; Tanaka, T.; Ono, Y.; Chinone, N.; Kajimura, T.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1667
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAlAs gain-guided semiconductor lasers having a curved facet are fabricated by employing reactive ion beam etching. The use of the curved facet permits stabilization of transverse mode in the direction parallel to the junction plane, reduction of astigmatism, and multilongitudinal mode oscillation.
ACCESSION #
9825043

 

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