Microscopic origin of light-induced changes in hydrogenated amorphous silicon

Jang, Jin; Lee, Chang Geun; Park, Seung Chul; Lee, Choochon
November 1987
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1673
Academic Journal
Light-induced changes in the stretching mode absorption of Si-H and Si-H2 have been studied for hydrogenated amorphous silicon (a-Si:H) films. The absorption below 2000 cm-1 decreases greatly, but a small change has been observed above 2100 cm-1. The magnitude of the overall change increases as the substrate temperature is lowered and little change is observed for a-Si:H films deposited at above 200 °C. The change in boron-doped a-Si:H is small compared with the undoped film deposited at the same substrate temperature. Based on experimental results, it is suggested that the hydrogen in the bulk of a-Si:H diffuses to the microvoids during light illumination.


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