X-ray photoemission study of the Te-precursor surfaces and the initial stages of growth of ZnTe on GaAs (100)

Tatarenko, S.; Saminadayar, K.; Cibert, J.
November 1987
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1690
Academic Journal
The initial stages of epitaxial growth of ZnTe on GaAs (100) have been studied by x-ray photoemission spectroscopy. The two surface structures (6×1 and (3)1/2×3 ) resulting from the adsorption of Te on GaAs (100) were used as precursor for ZnTe growth. Each of these structures is characterized by two different adsorbed Te states. For the 6×1 structure, the two states are assigned to As–Te–As and tentatively to Te–Te–Te bonds; and for the (3)1/2×3 structure, the assigned bonds are As–Te–As and GaGa Te–As. Growth of ZnTe (100) does not induce any change in the bonds associated with the 6×1 structure but modifies that associated with the (3)1/2×3 surface.


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