Identification of the titanium-related levels in GaP

Roura, P.; Bremond, G.; Nouailhat, A.; Guillot, G.; Ulrici, W.
November 1987
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1696
Academic Journal
Deep level transient spectroscopy, deep level optical spectroscopy, and optical absorption experiments were carried out in n- and p-type Ti-doped GaP crystals grown by the liquid encapsulated Czochralski technique. The single acceptor level of substitutional titanium Ti3+/Ti2+ was identified by deep level transient spectroscopy at an energy of 0.50±0.02 eV from the conduction band. The Ti2+ intracenter transitions were detected by deep level optical spectroscopy and optical absorption about 0.63 and 1.03 eV. The Ti4+/Ti3+ donor level was found at about 1±0.2 eV from the top of the valence band. The position of these two levels is found in complete agreement with the position of titanium-related levels in GaAs and in InP.


Related Articles

  • Examination of electrical and optical properties of vanadium in bulk n-type silicon carbide. Evwaraye, A. O.; Smith, S. R.; Mitchel, W. C. // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p5769 

    Deals with a study which characterized the deep impurity levels in n-type 6H-SiC single crystals using deep level transient spectroscopy. Experimental details; Results and discussion; Conclusion.

  • Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy. Arehart, A. R.; Homan, T.; Wong, M. H.; Poblenz, C.; Speck, J. S.; Ringel, S. A. // Applied Physics Letters;6/14/2010, Vol. 96 Issue 24, p242112 

    Deep levels in N-face and Ga-face n-type GaN grown by plasma-assisted molecular beam epitaxy were detected, analyzed and compared using deep level optical spectroscopy (DLOS) and conventional thermal deep level transient spectroscopy (DLTS), which together enable deep level detection throughout...

  • Electrical and optical properties of rod-like defects in silicon. Goss, J.P.; Briddon, P.R.; Eberlein, T.A.G.; Jones, R.; Pinho, N.; Blumenau, A.T.; Öberg, S. // Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4633 

    SeIf-interstitials in silicon can aggregate to form rod-like defects (RLDs) having both electrical and optical activity. We carry out local density functional calculations for both [113] and [111] RLDs to determine their structures and electrical activity. We find that small [113] RLDs are more...

  • Titanium-related deep levels in silicon: A reexamination. Mathiot, D.; Hocine, S. // Journal of Applied Physics;12/15/1989, Vol. 66 Issue 12, p5862 

    Presents information on a study which utilized deep-level transient spectroscopy (DLTS) to determine the energetic positions of the deep levels induced by titanium in the silicon band gap. Direct measurements of the hole-capture cross section performed; Discussion of the DLTS spectrum obtained...

  • Optimization of the energy resolution of deep level transient spectroscopy. Nolte, D. D.; Haller, E. E. // Journal of Applied Physics;8/1/1987, Vol. 62 Issue 3, p900 

    Studies the optimization of the energy resolution of deep level transient spectroscopy (DLTS). Effects of crystal defects in semiconductors; Goal of DLTS signal processing; Discussion on the rate window technique.

  • Deep-level transient spectroscopy on p-type silicon crystals containing tungsten impurities. Ando, Toshio; Isomae, Seiichi; Munakata, Chusuke; Abe, Takao // Journal of Applied Physics;11/15/1991, Vol. 70 Issue 10, p5401 

    Presents deep-level transient spectroscopy on p-type silicon crystals containing tungsten impurities. Evidence that the hole traps located in the valence are caused by the tungsten impurities; Information on the potential technical applications of tungsten; Energy levels of tungsten in silicon...

  • Deep levels in indium selenide single crystals doped with iodine. Micocci, G.; Tepore, A.; Rella, R.; Siciliano, P. // Journal of Applied Physics;11/1/1995, Vol. 78 Issue 9, p5427 

    Presents information on a study which investigated electron trapping levels in indium selenide single crystals doped with iodine, by deep-level-transient spectroscopy measurements. Experimental details; Results and discussion; Conclusions.

  • Photoionization cross section of In0.49Ga0.51P:Fe. Takanohashi, T.; Nakajima, K. // Applied Physics Letters;2/6/1989, Vol. 54 Issue 6, p529 

    We determined spectral dependence of the photoionization cross section of the Fe acceptor in In0.49Ga0.15P by photocapacitance spectroscopy. As a result of the alloy effect we observed the nonexponential photocapacitance transient. We treated it with a model of the energetically broadened defect...

  • New semi-insulating InP: Titanium midgap donors. Brandt, C. D.; Hennel, A. M.; Pawlowicz, L. M.; Wu, Y.-T.; Bryskiewicz, T.; Lagowski, J.; Gatos, H. C. // Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1162 

    Deep levels due to titanium were identified for the first time in InP and GaAs employing capacitance transients and optical absorption measurements. They were found to be Ti4+/Ti3+ donor levels at energies of 0.63±0.03 eV and 1.00±0.03 eV in InP and GaAs, respectively. The near midgap...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics