TITLE

Identification of the titanium-related levels in GaP

AUTHOR(S)
Roura, P.; Bremond, G.; Nouailhat, A.; Guillot, G.; Ulrici, W.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1696
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Deep level transient spectroscopy, deep level optical spectroscopy, and optical absorption experiments were carried out in n- and p-type Ti-doped GaP crystals grown by the liquid encapsulated Czochralski technique. The single acceptor level of substitutional titanium Ti3+/Ti2+ was identified by deep level transient spectroscopy at an energy of 0.50±0.02 eV from the conduction band. The Ti2+ intracenter transitions were detected by deep level optical spectroscopy and optical absorption about 0.63 and 1.03 eV. The Ti4+/Ti3+ donor level was found at about 1±0.2 eV from the top of the valence band. The position of these two levels is found in complete agreement with the position of titanium-related levels in GaAs and in InP.
ACCESSION #
9825021

 

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