Generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te

Djuric, Zoran; Piotrowsky, Jozef
November 1987
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1699
Academic Journal
A generalized model of the isothermal vapor phase epitaxy of (Hg,Cd)Te is presented, which for the first time enables us to predict the compositional profiles of the layers in dependence on growth parameters (temperature and time of deposition, mercury and inert gas partial pressures in the growth chamber, source to substrate spacing). The model can be applied to both closed and opened tube isothermal vapor phase epitaxy of (Hg,Cd)Te, and it explains quantitatively all the peculiarities of the epitaxial growth using this method. The model is confronted with experimental data, which correspond satisfactorily to the calculations without any fitting parameters.


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