TITLE

Integrate-and-fire infrared detectors

AUTHOR(S)
Coon, D. D.; Perera, A. G. U.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1711
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of infrared radiation on spontaneous pulsing of forward biased silicon p+-n-n+ diodes (injection mode devices) at 4.2 K is studied as a means of detecting infrared radiation in the wavelength range of 20–32 μm. A model based on space-charge buildup of phosphorus donors in the i region is developed to explain the integration and the sudden firing as well as the dependence of firing frequency on infrared flux. Experimentally, a dynamic range of about a million and responsivities of 9×109 Hz/W (9.6 A/W) have been found in nonoptimized detectors. Theory indicates the possibility of even larger dynamic ranges. Dark pulse rates as low as 10-5 Hz have been observed.
ACCESSION #
9825014

 

Related Articles

  • Planar silicon structure in application to the modulation of infrared radiation. PIOTROWSKI, TADEUSZ; TOMASZEWSKI, DANIEL; WEGRZECKI, MACIEJ; MALYUTENKO, VLADIMIR K.; TYKHONOV, ANDREW M. // Optica Applicata;2011, Vol. 41 Issue 2, p333 

    We report on the performance of planar silicon diodes, operating at a temperature range above 300 K and emitting infrared radiation. The results present a theoretical analysis and experimental verification of an optimization aimed at a maximal difference between emissivity of this structure for...

  • Toward marrying electronics, optics. Teresko, John // Industry Week/IW;01/20/97, Vol. 246 Issue 2, p67 

    Reports on the development of a silicon diode with capabilities to process light and electricity by researchers from the University of Rochester and the Rochester Institute of Technology. Integration of a porous silicon light emitting diode into conventional microelectronic circuitry.

  • John Allen's diode triangles. Paul, Kermit // Model Railroader;Oct97, Vol. 64 Issue 10, p93 

    Focuses on directional lighting circuits while highlighting John Allen's diode triangles for additional directional lights to steam locomotives which was designed to simplify connections between engines and tenders. Why the connection was important to Allen; Information on Allen's diode...

  • Skimming electrons brighten up the spectrum.  // New Scientist;11/7/92, Vol. 136 Issue 1846, p15 

    Reports on a technique that could be used to make a new source of electromagnetic radiation that would be both powerful and tunable in wavelength. This far-infrared radiation is used in a wide range of research from solid-state physics to studies of large molecules such as proteins. ...

  • IR annealing for polycarbonate.  // Appliance Manufacturer;May93, Vol. 41 Issue 5, p38 

    Focuses on infrared (IR) annealing for polycarbonate medical devices as opposed to oven annealing. Development of the infrared (IR) radiation technology by the parent company of Miles, Inc.; Advantages of the process; Reduction of part stress; Improvement of the characteristics of the device.

  • Does black paint radiate heat better than white paint? Martin, David P.; Russell, Randy D. // Journal of College Science Teaching;Feb95, Vol. 24 Issue 4, p279 

    Discusses methods for demonstrating difference in emission of infrared radiation. Classroom demonstration of infrared emission of white and black-painted surfaces; Measurement of temperature change; Performance of demonstration.

  • 1.3-μm light-emitting diode from silicon electron irradiated at its damage threshold. Canham, L. T.; Barraclough, K. G.; Robbins, D. J. // Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1509 

    We report 77-K electroluminescence from an irradiated carbon-rich silicon diode that has an internal quantum efficiency more than 103 times higher than that of band-to-band recombination in an unirradiated, but otherwise identical diode. This is achieved by creating optically active Cs-SiI-Cs...

  • Peculiarities of the Formation and Thermal Stability of Barrier Contacts in High-Sensitivity Silicon Carbide Detector Diodes. Boltovets, N. S.; Zorenko, A. V.; Ivanov, V. N.; Vlaskina, S. I.; Konakova, R. V.; Kudrik, Ya. Ya.; Litvin, P. M.; Litvin, O. S.; Milenin, V. V.; Abdizhaliev, S. K. // Technical Physics Letters;Jan2003, Vol. 29 Issue 1, p22 

    The effect of rapid thermal treatment at T=1000°C on the formation of TiB[sub x]-n-SiC6H(000&1macr;) barrier contacts and Ni-n-SiC6H(0001) ohmic contacts was studied. In the former case, thermal treatment neither disturbs the layer structure nor reduces the thermal stability of the barrier...

  • Hydrogen Sensitivity of a Silicon Schottky Diode Increased by Modification of the Semiconductor Surface Microrelief. Tikhov, S. V.; Pavlov, D. A.; Shilyaev, P. A.; Shobolov, E. L.; Os�kin, A. A. // Technical Physics Letters;May2002, Vol. 28 Issue 5, p355 

    A nearly atomically smooth semiconductor surface in a Schottky diode based on the palladiumoxide-silicon structure is modified by treating with a selective etchant. It is shown that the appearance of a developed microrelief (with an average roughness of 22-32 nm and a fractal dimension of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics