Integrate-and-fire infrared detectors

Coon, D. D.; Perera, A. G. U.
November 1987
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1711
Academic Journal
The effect of infrared radiation on spontaneous pulsing of forward biased silicon p+-n-n+ diodes (injection mode devices) at 4.2 K is studied as a means of detecting infrared radiation in the wavelength range of 20–32 μm. A model based on space-charge buildup of phosphorus donors in the i region is developed to explain the integration and the sudden firing as well as the dependence of firing frequency on infrared flux. Experimentally, a dynamic range of about a million and responsivities of 9×109 Hz/W (9.6 A/W) have been found in nonoptimized detectors. Theory indicates the possibility of even larger dynamic ranges. Dark pulse rates as low as 10-5 Hz have been observed.


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