Mechanism of alkali-promoted oxidation of silicon

Asensio, M. C.; Michel, E. G.; Oellig, E. M.; Miranda, R.
November 1987
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1714
Academic Journal
Photoelectron spectroscopy data suggest that the mechanism of enhanced oxidation of Si promoted by multilayers of K deposited on its surface is based on the formation of potassium oxides, identified as K2O2 and KO2, that transfer oxygen efficiently to the Si substrate upon annealing at 900 K.


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