TITLE

Mechanism of alkali-promoted oxidation of silicon

AUTHOR(S)
Asensio, M. C.; Michel, E. G.; Oellig, E. M.; Miranda, R.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1714
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoelectron spectroscopy data suggest that the mechanism of enhanced oxidation of Si promoted by multilayers of K deposited on its surface is based on the formation of potassium oxides, identified as K2O2 and KO2, that transfer oxygen efficiently to the Si substrate upon annealing at 900 K.
ACCESSION #
9825011

 

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