TITLE

Nanometer-scale columns in GaAs fabricated by angled chlorine ion-beam-assisted etching

AUTHOR(S)
Goodhue, W. D.; Pang, S. W.; Johnson, G. D.; Astolfi, D. K.; Ehrlich, D. J.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1726
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Angled chlorine ion-beam-assisted etching has been used in combination with masked ion beam lithography to produce columns in GaAs with widths of less than 10 nm and height-to-width ratios greater than 25. This technique allows the highly controllable fabrication of structures with dimensions smaller than initially defined by the lithography. It can be applied to the fabrication of ultrasmall GaAs/AlGaAs quantum well structures having quantized energy states in two or three dimensions while at the same time being compatible with full-wafer processing.
ACCESSION #
9825004

 

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