Comment on ‘‘Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers’’ [Appl. Phys. Lett. 49, 1257 (1986)]

Won, T.; Munns, G.; Houdré, R.; Morkoç, H.
November 1987
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1756
Academic Journal
In this comment we report new experimental results for the capacitance voltage measurement of p-GaAs/n-Si heterojunction diodes and point out the inappropiate assumption used in our previous letter that the boundaries of the depletion layer do not change much despite the presence of the prelayer. (AIP)


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