TITLE

Comment on ‘‘Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers’’ [Appl. Phys. Lett. 49, 1257 (1986)]

AUTHOR(S)
Won, T.; Munns, G.; Houdré, R.; Morkoç, H.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1756
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this comment we report new experimental results for the capacitance voltage measurement of p-GaAs/n-Si heterojunction diodes and point out the inappropiate assumption used in our previous letter that the boundaries of the depletion layer do not change much despite the presence of the prelayer. (AIP)
ACCESSION #
9824983

 

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