Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructure

Ogura, Mutsuo; Hsin, Wei; Wu, Ming-Chiang; Wang, Shyh; Whinnery, John R.; Wang, S. C.; Yang, Jane J.
November 1987
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1655
Academic Journal
Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface-emitting laser diode with lateral buried heterostructure (LBH). In this LBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded with n- and p-type AlGaAs cladding layers for minority-carrier confinement. The far-field angle is 7°. The beam shape is nearly circular. However, the lasing spectrum is broad (2–3 nm) compared with the conventional edge-emitting laser. Major differences between the surface-emitting laser diode presented here and the conventional edge-emitting laser diode are discussed.


Related Articles

  • Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures. Zotova, N. V.; Karandashev, S. A.; Matveev, B. A.; Remennyı, M. A.; Stus’, N. M.; Talalakin, G. N. // Technical Physics Letters;Jan97, Vol. 23 Issue 1, p41 

    Data are presented on diode mesa stripe lasers utilizing InAsSbP/InGaAsSb double heterostructures, which are the first long-wavelength lasers to be doped with the rare-earth element gadolinium. It is shown that doping enhances the threshold characteristics. Measurements made of the current...

  • Internal Quantum Efficiency of Stimulated Emission of (λ = 1.55μm) InGaAsP/InP Laser Diodes. Skrynnikov, G. V.; Zegrya, G. G.; Pikhtin, N. A.; Slipchenko, S. O.; Shamakhov, V. V.; Tarasov, I. S. // Semiconductors;Feb2003, Vol. 37 Issue 2, p233 

    The stimulated emission (η[sup st, sub i]) of InGaAsP/InP separate-confinement double heterostructure lasers operating at λ = 1.5-1.6 µm has been studied experimentally and theoretically. Laser heterostructures with a varied design of the waveguide layer were grown by MOCVD. The maximum...

  • 1.7�1.8�m Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures. Lyutetski&ibreve;, A. V.; Pikhtin, N. A.; Slipchenko, S. O.; Sokolova, Z. N.; Fetisova, N. V.; Leshko, A. Yu.; Shamakhov, V. V.; Andreev, A. Yu.; Golikova, E. G.; Ryaboshtan, Yu. A.; Tarasov, I. S. // Semiconductors;Nov2003, Vol. 37 Issue 11, p1356 

    Separate-confinement InGaAsP/InP heterostructures with highly strained quantum wells are grown by metal�organic vapor-phase epitaxy (MOVPE). The properties of InGaAsP and InGaAs quantum wells are studied, and the influence of the heterostructure parameters on the lasing wavelength is...

  • Diode-laser-pumped InGaAs/GaAs/AlGaAs heterostructure lasers with low internal loss and 4-W.... Le, H.Q.; Goodhue, W.D. // Applied Physics Letters;9/13/1993, Vol. 63 Issue 11, p1465 

    Examines the optically pumped heterostructure lasers with low internal loss and four-watts average power. Effect of absorption length on thermal load density; Use of pump diode arrays for pulsed operation; Study of power output and efficiency as a function of output coupling and stripe length.

  • Pseudomorphic separate confinement heterostructure blue-green diode lasers. Grillo, D.C.; Fan, Y. // Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2723 

    Describes the growth and performance of pseudomorphic separate confinement heterostructure blue-green laser diodes. Operation of the device at room temperature under pulsed conditions; Advantages of incorporating the quaternary in the device; Dependence of the device lifetime variation on the...

  • Buried-oxide ridge-waveguide InAlAs-InP-InGaAsP (lambda approximates 1.3 mum) quantum well.... Krames, M.R.; Holonyak Jr., N. // Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2821 

    Examines the use of native oxide technology to fabricate quantum well heterostructure laser diodes. Details of the native-oxide fabrication process; Effects of limited acceptor doping on laser fabrication; Information on carrier edge and surface recombination losses in the native oxide layer.

  • Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate. Windhorn, T. H.; Metze, G. M. // Applied Physics Letters;11/15/1985, Vol. 47 Issue 10, p1031 

    Room-temperature operation has been achieved for GaAs/AlGaAs heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate. These devices, which incorporate a large optical cavity structure grown by molecular beam epitaxy directly on a Si wafer, have exhibited threshold currents as...

  • Operation and dynamics of ZnSe/ZnMgSSe double heterostructure blue laser diode at room temperature. Okuyama, Hiroyuki; Kato, Eisaku // Applied Physics Letters;2/6/1995, Vol. 66 Issue 6, p656 

    Investigates the room temperature operation and dynamics of ZnSe/ZnMgSSe double heterostructure laser diode. Details on the lasing wavelength and threshold carrier density; Relevance of band filling and shrinkage in emission energy; Information on electron-hole plasma.

  • Low threshold current implanted-planar buried-heterostructure graded-index separate confinement heterostructure laser in GaAs/AlGaAs. Vawter, G. Allen; Myers, D. R.; Brennan, Tom M.; Hammons, B. E. // Applied Physics Letters;5/14/1990, Vol. 56 Issue 20, p1945 

    We report dramatic improvements to the implanted-planar buried-heterostructure graded-index separate confinement heterostructure (IPBH-GRINSCH) laser in (AlGa)As/GaAs which produces low threshold current, continuous-wave operation. Our process features significantly reduced fabrication...

  • The effect of interstital Frank partial dislocations on the gradual degradation of 1.3-μm double-channel planar buried heterostructure laser diodes. de Cooman, B. C.; Bulle-Lieuwma, C. W. T.; de Poorter, J. A.; Nijman, W. // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p3919 

    Presents a study that examined the structure of defects occurring in heterostructure type laser diodes. Analysis of the electrical activity of the defects; Evaluation of the microstructure of degraded laser diodes; Assessment of the high-resolution lattice imaging of degraded lasers.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics