TITLE

Bright white-light electroluminescence based on nonradiative energy transfer in Ce- and Eu-doped SrS thin films

AUTHOR(S)
Tanaka, Shosaku; Yoshiyama, Hideki; Nishiura, Junichi; Ohshio, Shozo; Kawakami, Hiroyuki; Kobayashi, Hiroshi
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1661
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A bright white-light electroluminescence (EL) is obtained in a thin-film EL device with Ce- and Eu-doped SrS phosphors. The device shows a luminance level of 1500 cd/m2 with 5 kHz drive (500 cd/m2 at 1 kHz). The dominant excitation process of the Eu2+ centers is found to be due to an efficient nonradiative energy transfer from the Ce3+ to the Eu2+ centers.
ACCESSION #
9824974

 

Related Articles

  • Grain growth in thin-film strontium sulfide electroluminescent phosphors. Xin, Y.B.; Summers, C.J. // Applied Physics Letters;9/27/1999, Vol. 75 Issue 13, p1860 

    Examines the grain growth in thin-film strontium sulfide electroluminescent phosphors. Influence of the migration of the dopant ion from the grain boundary into a lattice position in the grain growth during annealing; Factors that contributed to changes in the activation energy for the grain...

  • Local compositional environment of Er in ZnS:ErF3 thin film electroluminescent phosphors. Davidson, Mark R.; Stoupin, Stanislav; DeVito, David; Collingwood, Joanna F.; Segre, Carlo; Holloway, Paul H. // Journal of Applied Physics;Mar2011, Vol. 109 Issue 5, p054505 

    ZnS:Er thin film electroluminescent phosphors have been shown to exhibit a marked maximum in the near infrared emission (NIR) after a 425 °C post-deposition anneal with a very narrow temperature window of ±25 °C for optimal NIR emission. Extended X-ray absorption fine structure (EXAFS)...

  • Blue electroluminescence from multilayered BaS:Eu/Al[sub 2]S[sub 3] thin films. Smet, P.F.; Poelman, D.; Van Meirhaeghe, R.L. // Journal of Applied Physics;1/1/2004, Vol. 95 Issue 1, p184 

    Electroluminescent (EL) BaAl[sub 2]S[sub 4]:Eu devices were prepared with a multilayered phosphor, composed of 10–20 alternating BaS:Eu and Al[sub 2]S[sub 3] thin films and a total phosphor thickness of 300 nm. Depending on evaporation and annealing conditions, pure blue EL was obtained...

  • Modeling space charge in alternating-current thin-film electroluminescent devices using a single-sheet charge model. Keir, P. D.; Ang, W. M.; Wager, J. F. // Journal of Applied Physics;10/1/1995, Vol. 78 Issue 7, p4668 

    Presents a simulation of alternating-current thin-film electroluminescent (ACTFEL) device operation with positive space charge present in the phosphor layer of the device. Reason for choosing ACTFEL device model over distributed models; General form of the single-sheet charge model; Steps in...

  • Green electroluminescence of EuGa[sub 2]S[sub 4] thin films. Tanaka, Katsu; Okamoto, Shinji // Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p647 

    Green electroluminescence (EL) was observed in europium thiogallate (EuGa&sub2;S[sub4]) thin films, which is a stoichiometric phosphor material. The peak wavelength of the EL spectrum measured at 300 K was 536 nm. The spectrums color coordinates were (0.29,0.67), which is the pure green region....

  • Enhanced photoluminescence in epitaxial ZnGa[sub 2]O[sub 4]:Mn thin-film phosphors using... Yong Eui Lee; Norton, David P. // Applied Physics Letters;5/24/1999, Vol. 74 Issue 21, p3155 

    Studies the growth and properties of ZnGa[sub 2]O[sub 4]:Mn thin-film phosphors on single crystal substrates. Comparison of epitaxial film properties with polycrystalline films deposited on glass substrates; Photoluminescence in as-deposited films; Factors influencing luminescent properties.

  • A two-component phosphor approach for engineering electroluminescence phosphors. Jones, T.C.; Park, W. // Applied Physics Letters;10/18/1999, Vol. 75 Issue 16, p2398 

    Discusses a two-component phosphor approach for engineering electroluminescence (EL) phosphors. Use of the energy transfer in luminescent materials to enhance the performance of many lamp and plasma phosphors; Dependence of the EL luminance on applied voltage; Dependence of the device...

  • Electroluminescence Kinetics in Thin-Film ZnS-Based Devices at Ultralow Frequencies. Gurin, N. T.; Shlyapin, A. V.; Sabitov, O. Yu. // Technical Physics;Feb2002, Vol. 47 Issue 2, p215 

    The variation of the instantaneous luminance from thin-film electroluminescent structures excited by alternating-sign sawtooth voltage pulses with a pulse rate of 0.1-2.0 Hz is studied. From the solution of the kinetic equation, the time dependences of the instantaneous luminance and the...

  • Thin-film electroluminescent emitters on rough substrates. Gurin, N. T.; Sabitov, O. Yu.; Brigadnov, I. Yu. // Technical Physics Letters;Aug97, Vol. 23 Issue 8, p577 

    For thin-film ac electroluminescent emitters prepared on rough glass substrates in combination with the use of a layer of liquid-crystal insulating composite, a twofold increase has been observed in the emission brightness as compared with the usual emitters prepared on smooth substrates.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics