TITLE

Plasma enhanced chemical vapor deposition of epitaxial mercury telluride

AUTHOR(S)
Williams, L. M.; Lu, P.-Y.; Wang, C.-H.; Parsey, J. M.; Chu, S. N. G.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1738
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial layers of mercury telluride were deposited onto cadmium telluride substrates at 85 °C using a glow discharge to enhance the reaction between dimethylmercury and dimethyltelluride. Hall-effect measurements showed the material to be n type with room-temperature and 77 K carrier concentrations of 5.0×1017 and 1.0×1017 cm-3, respectively: room-temperature Hall mobility was 22 000 cm2/V s and 77 K mobility was 52 000 cm2/V s.
ACCESSION #
9824955

 

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