Electroabsorption in AlGaAs/GaAs multiple quantum well structures grown on a GaP transparent substrate

Lee, H. C.; Dzurko, K. M.; Dapkus, P. D.; Garmire, E.
November 1987
Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1582
Academic Journal
The first measurements of electroabsorption in AlGaAs/GaAs multiple quantum wells grown on transparent GaP substrates are reported. High quality quantum well materials with sharp, well defined excitonic resonances are grown by employing a GaAsP intermediate layer between the quantum wells and the substrate. Good surface morphology and abrupt interfaces have been achieved with etch pit densities of 4×105 cm-2. A 7.5-meV shift of the absorption edge to lower energies is observed for field strengths of 8×104 V/cm. These structures are well suited for photonic switch array fabrication.


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