Partial epitaxial growth of cobalt germanides on (111)Ge

Hsieh, Y. F.; Chen, L. J.; Marshall, E. D.; Lau, S. S.
November 1987
Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1588
Academic Journal
Localized epitaxial Co5Ge7 and CoGe2 have been grown in cobalt thin films on (111)Ge in the solid phase epitaxy regime. The orientation relationships between epitaxial germanides and the substrates as well as the configuration of the interfacial dislocations were analyzed by transmission electron microscopy (TEM) in detail. Surface morphology was examined by scanning electron microscopy. The results obtained from Read camera glancing angle x-ray diffraction and Rutherford backscattering channeling analysis were found to corroborate with those from TEM examinations.


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