TITLE

Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy

AUTHOR(S)
Le Corre, A.; Caulet, J.; Gauneau, M.; Loualiche, S.; L’Haridon, H.; Lecrosnier, D.; Roizes, A.; David, J. P.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1597
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InGaAs epitaxial layers have been doped with beryllium with concentrations ranging from 1016 to 5×1019 cm-3 as measured by secondary ion mass spectroscopy (SIMS). From electrical measurements we have observed that p-type layers presented a high degree of compensation, and for a doping level below 5×10-7 cm-3, they are often found to be n type. SIMS analysis shows that oxygen is responsible for such behavior. Beryllium doping leads to incorporation of a large amount of oxygen in the epitaxial layers. Investigations on the origin of oxygen incorporation show that it is extremely sensitive to the residual vacuum during the growth and can be reduced by decreasing arsenic pressure.
ACCESSION #
9824938

 

Related Articles

  • In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties. Urbanczyk, A.; Hamhuis, G. J.; Nötzel, R. // Journal of Applied Physics;Jan2010, Vol. 107 Issue 1, p014312 

    We report growth of crystalline In islands on GaAs (100) by molecular beam epitaxy at low temperatures. The islands have a pyramidlike shape with well defined facets and epitaxial relation with the substrate. They are of nanoscale dimensions with high density. Above a certain substrate...

  • Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer. Zuoming Zhao; Zhibiao Hao; Yadavalli, Kameshwar; Wang, Kang L.; Jacob, Ajey P. // Applied Physics Letters;2/25/2008, Vol. 92 Issue 8, p083111 

    InAs quantum dots (QDs) were grown on patterned Si substrates with a thin GaAs buffer using SiO2 as a mask by molecular beam epitaxy. GaAs was firstly selectively grown on the exposed Si surface with feature size around 250 nm. The InAs QDs were selectively grown on top of the GaAs. Low...

  • Critical shell thickness for InAs-AlxIn1-xAs(P) core-shell nanowires. Haapamaki, C. M.; Baugh, J.; LaPierre, R. R. // Journal of Applied Physics;12/15/2012, Vol. 112 Issue 12, p124305 

    InAs nanowires with AlxIn1-xP or AlxIn1-xAs shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid method in a gas source molecular beam epitaxy system. Core diameters and shell thicknesses were measured by transmission electron microscopy (TEM). These measurements were then...

  • Morphology evolution during strained (In,Ga)As epitaxial growth on GaAs vicinal (100) surfaces. Wang, Z. M.; Shultz, J. L.; Salamo, G. J. // Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1749 

    Molecular-beam-epitaxy growth of strained (In,Ga)As on GaAs vicinal (100) surfaces is investigated by scanning tunneling microscopy. Surface roughing as the consequence of step bunching driven by strain is explored. By tuning the In content over the range from 0.05 to 0.2, the step bunching is...

  • Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures. Grunthaner, F. J.; Yen, M. Y.; Fernandez, R.; Lee, T. C.; Madhukar, A.; Lewis, B. F. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p983 

    We report successful molecular beam epitaxial growth of thin multiple quantum well structures of GaAs/InAs(100) involving 7.4% lattice mismatch. Cross-sectional transmission electron microscopy studies reveal well formed interfaces and low defect density.

  • Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy. Reithmaier, J.-P.; Cerva, H.; Lösch, R. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p48 

    We have studied strained InGaAs quantum wells with GaAlAs barriers, grown by molecular beam epitaxy, varying In content and well thickness. Photoluminescence measurements were made at 12 K. The appearance of a characteristic additional exciton-like photoluminescence peak indicates the transition...

  • Analytical description of the metal-assisted growth of III–V nanowires: Axial and radial growths. Plante, Martin C.; LaPierre, Ray R. // Journal of Applied Physics;Jun2009, Vol. 105 Issue 11, p114304 

    The growth of III–V nanowires from metal seed particles is described in an analytical manner within the framework of a material conservation model. Direct impingement of growth species on the particle, coupled to their diffusion from the sidewall and the substrate surface, are considered...

  • Electroabsorption effects in InxGa1-xAs/GaAs strained-layer superlattices. Niki, S.; Kellner, A. L.; Lin, S. C.; Cheng, A.; Williams, A. R.; Chang, W. S. C.; Wieder, H. H. // Applied Physics Letters;1/29/90, Vol. 56 Issue 5, p475 

    Electroabsorption of strained-layer Inx Ga1-x As/GaAs superlattice structures grown by molecular beam epitaxy on GaAs substrates was experimentally investigated. Its spectral characteristics were found to be similar to those of Franz–Keldysh electroabsorption of bulk semiconductor...

  • Molecular beam epitaxy of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 on InAs substrates. Lott, J. A.; Dawson, L. R.; Jones, E. D.; Klem, J. F. // Applied Physics Letters;3/26/1990, Vol. 56 Issue 13, p1242 

    Epitaxial films of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 were grown lattice matched on (100) InAs substrates by molecular beam epitaxy. The material was characterized by x-ray diffraction, 4 K photoluminescence, and capacitance-voltage measurement techniques. At 300 K, background acceptor...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics