Photoconduction dynamics in a GaAs/AlGaAs superlattice photoconductor

Minot, C.; Le Person, H.; Alexandre, F.; Palmier, J. F.
November 1987
Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1626
Academic Journal
We report on room-temperature measurements of electron and hole mobilities perpendicularly to the layers of a GaAs/AlGaAs superlattice inserted in a n-i-n photoconductor as the intrinsic region. The dynamical behavior of the structure is described by means of a numerical simulation which solves the classical drift-diffusion transport equations. We discuss the electron and hole mobilities, μn=120 cm2/(V s) and μp=12.5 cm2/(V s) respectively, by referring to the two distinct mechanisms of Bloch and hopping conduction, as well as to the peculiar electronic properties of the superlattices.


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