680-nm band GaInP/AlGaInP tapered stripe laser

Ikeda, M.; Sato, H.; Ohata, T.; Nakano, K.; Toda, A.; Kumagai, O.; Kojima, C.
November 1987
Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1572
Academic Journal
A gain-guiding tapered stripe laser was fabricated using a Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 °C, an aspect ratio of about 2, and an astigmatism near 25 μm. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 °C with a constant output power of 3 mW.


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