TITLE

Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates

AUTHOR(S)
El-Masry, N.; Tarn, J. C. L.; Humphreys, T. P.; Hamaguchi, N.; Karam, N. H.; Bedair, S. M.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1608
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In GaAs-GaAsP strained-layer superlattices grown lattice matched to GaAs are effective buffer layers in reducing dislocations in epitaxial GaAs films grown on Si substrates. The strained-layer superlattice structure permits high values of strain to be employed without the strained-layer superlattice generating dislocations of its own. We find that the strained-layer superlattice buffer is extremely effective in blocking threading dislocations of low density and is less effective when the dislocation is high. It appears that for a given strained-layer superlattice there is a finite capacity for blocking dislocations. Transmission electron microscopy has been used to investigate the role of the superlattice buffer layer.
ACCESSION #
9824880

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics