TITLE

High-quality InAlAs grown by organometallic vapor phase epitaxy

AUTHOR(S)
Aina, Leye; Mattingly, Mike
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1637
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-quality InAlAs with excellent photoluminescence and low electron concentrations has been grown by organometallic vapor phase epitaxy (OMVPE). For InAlAs lattice matched to InP, electron concentrations as low as 7×1015 cm-3 and mobilities as high as 4472 cm2/V s at 300 K have been achieved. These values are comparable to results measured on material grown by liquid phase epitaxy and molecular beam epitaxy and exceed results for previously published OMVPE grown material. The variation of the structural, optical, and electrical properties of the InAlAs with lattice mismatch is reported.
ACCESSION #
9824876

 

Related Articles

  • Low-temperature photoluminescence of epitaxial InAs. Lacroix, Y.; Tran, C. A.; Watkins, S. P.; Thewalt, M. L. W. // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6416 

    Examines the low-temperature photoluminescence of epitaxial indium arsenide (InAs) grown by metal-organic chemical-vapor deposition (MOCVD). Description of the MOCVD growth of InAs on InAS substrates; Discussion on the InAs spectrum; Mechanisms of broadband luminescence.

  • Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition. PRZESLAWSKI, TOMASZ; WOLKENBERG, ANDRZEJ; KANIEWSKI, JANUSZ; REGINSKI, KAZIMIERZ; JASIK, AGATA // Optica Applicata;2005, Vol. 35 Issue 3, p627 

    In this paper we, describe the design and fabrication process of Hall and magnetoresistor cross-shaped sensors using In0.53Ga0.47As/InP layer structures as active media. The influence of geometric correction factor GH on sensitivity parameters of these devices has been investigated. The results...

  • In Situ Spectral Reflectance Investigation of InAs/GaAs Heterostructures Grown by MOVPE. Massoudi, I.; Habchi, M.M.; Rebey, A.; El Jani, B. // Journal of Electronic Materials;Mar2012, Vol. 41 Issue 3, p498 

    Metalorganic vapor-phase epitaxy of InAs/GaAs heterostructures was monitored in situ by spectral reflectance in the wavelength range from 600 nm to 1000 nm. Three-dimensional (3D) plots of reflectivity as a function of time and wavelength were used to determine the growth rate evolution....

  • Formation conditions for InAs/GaAs quantum dot arrays by droplet epitaxy under MOVPE conditions. Akchurin, R.; Berliner, L.; Boginskaya, I.; Gordeev, E.; Egorova, E.; Marmalyuk, A.; Ladugin, M.; Surnina, M. // Technical Physics;Jan2014, Vol. 59 Issue 1, p78 

    The first stage of formation of InAs/GaAs quantum-dot heterostructures by droplet epitaxy is investigated. Factors influencing the geometrical size and density of arrays of indium nanodrops deposited by trimethylindium pyrolysis on the GaAs(100) substrate are analyzed, and the possibility of...

  • Optical characteristics of single InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 μm. Cade, N. I.; Gotoh, H.; Kamada, H.; Nakano, H.; Anantathanasarn, S.; Nötzel, R. // Applied Physics Letters;10/30/2006, Vol. 89 Issue 18, p181113 

    The authors have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs around 1550 nm with a characteristic...

  • Effect of metal organic vapor phase epitaxy growth conditions on emission wavelength stability of 1.55 μm quantum dot lasers. Franke, D.; Moehrle, M.; Boettcher, J.; Harde, P.; Sigmund, A.; Kuenzel, H. // Applied Physics Letters;8/20/2007, Vol. 91 Issue 8, p081117 

    InAs quantum dots (QDs) on InP were implemented as active layers in laser structures completely grown by metal organic vapor phase epitaxy (MOVPE). In laser structures due to growth of the upper InP cladding layers onto the QDs, a marked blueshift of the emission wavelength and a simultaneous...

  • Photoluminescent Properties of InAs Quantum Dots Grown by MOVPE on an InxAlyGa1-x-yAs Layer and their Dependence on the Layer Stoichiometry. Mendoza-Alvarez, Julio G.; Pires, Mauricio P.; Landi, Sandra M.; Souza, Patricia L.; Villas-Boas, Jose M.; Studart, Nelson // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p943 

    In this paper we report on the growth, using MOVPE (Metal Organic Vapor Phase Epitaxy), of a layer of InAs quantum dots (QDs) on top of quaternary layers of In0.53AlyGa0.47-yAs lattice-matched to InP substrates, with a variable Stoichiometry due to the variation in the Al concentration. It has...

  • Growth of linearly ordered arrays of InAs nanocrystals on scratched InP. Fonseca-Filho, H. D.; Almeida, C. M.; Prioli, R.; Pires, M. P.; Souza, P. L.; Wu, Z. H.; Wei, Q. Y.; Ponce, F. A. // Journal of Applied Physics;Mar2010, Vol. 107 Issue 5, p054313 

    Linear arrays of InAs nanocrystals have been produced by metalorganic vapor phase epitaxy on scratches performed with an atomic force microscope tip along specific crystallographic directions of an (100) InP wafer. Scratches along <110> generate highly mobile defects that extend far from the...

  • Effects of well thickness on the spectral properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors. Jolley, G.; Fu, L.; Tan, H. H.; Jagadish, C. // Applied Physics Letters;5/12/2008, Vol. 92 Issue 19, p199901 

    We report on the effects of the quantum well (QW) thickness on the spectral response and other characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics