TITLE

Narrow two-dimensional electron gas channels in GaAs/AlGaAs sidewall interfaces by selective growth

AUTHOR(S)
Asai, Hiromitsu; Yamada, Syoji; Fukui, Takashi
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1518
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Narrow two-dimensional electron gas (2DEG) channels have been fabricated for the first time on GaAs/Al0.3Ga0.7As sidewall interfaces by selective growth using metalorganic chemical vapor deposition (MOCVD). The 4-μm-wide 2DEG channels are formed on the {111}A facets by controlling the facet formation in the selective growth layers only through MOCVD growth conditions. The angular dependence of Shubnikov–de Haas oscillations has confirmed the existence of 2DEG on the {111}A facets.
ACCESSION #
9824845

 

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