Reduction of Hg1-xCdxTe native oxide during the SiNx deposition process

Sudo, G.; Kajihara, N.; Miyamoto, Y.; Tanikawa, K.
November 1987
Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1521
Academic Journal
Electron cyclotron resonance plasma chemical vapor deposition enables low-temperature SiNx deposition on Hg1-xCdxTe (MCT). The SiNx film has an excellent interface on MCT with a low surface state density of 1.0×1011 cm-2 eV-1 and a low fixed charge of -1.4×1011 cm-2. A detailed analysis by x-ray photoelectron spectroscopy and Auger electron spectroscopy spectra of Te, Cd, and Si at the SiNx/MCT interface indicated that the SiNx deposition reduces the naturally grown MCT native oxide. The oxygen taken from Te oxidizes SiH4 and produces silicon oxides which remain in the SiNx film. Since a chemical shift caused by oxidized Cd at the fresh surface of MCT is very slight, intentionally oxidized samples were used to confirm the above reaction. The analysis of the shape of the Si(2p) peak at the interface indicated that the silicon oxides are composed of SiO and SiO2. Thermodynamic considerations support such a mechanism.


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