TITLE

Characterization of short-range leakage currents in undoped polycrystalline Si by means of capacitance-voltage measurement

AUTHOR(S)
Alpern, Y.; Shappir, J.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1524
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Metal-oxide-semiconductor capacitors with undoped polycrystalline Si (polysilicon) electrodes were studied and a model was developed to explain the voltage and frequency dependence of the capacitance and serial resistance. The model assumes random distribution of leaky paths in the polycrystalline Si layer which supply the charge to the polysilicon-oxide interface.
ACCESSION #
9824840

 

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