Characterization of short-range leakage currents in undoped polycrystalline Si by means of capacitance-voltage measurement

Alpern, Y.; Shappir, J.
November 1987
Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1524
Academic Journal
Metal-oxide-semiconductor capacitors with undoped polycrystalline Si (polysilicon) electrodes were studied and a model was developed to explain the voltage and frequency dependence of the capacitance and serial resistance. The model assumes random distribution of leaky paths in the polycrystalline Si layer which supply the charge to the polysilicon-oxide interface.


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