TITLE

Yield dependency on length of AlGaAs/GaAs second-order distributed feedback lasers with cleaved facets

AUTHOR(S)
Hirata, Shoji; Ohata, Toyoharu; Yamamoto, Tadashi; Kojima, Chiaki
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1475
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of length on the yield of second-order distributed feedback lasers with cleaved facets capable of operating in a single longitudinal mode and on their characteristics has been studied experimentally. The optimum length of 200 μm was determined in reference to the coupling coefficient and the end-facet reflectivity. A yield of more than 70% was obtained for lasers 200 μm in length capable of operating at a level of at least 10 mW and over.
ACCESSION #
9824815

 

Related Articles

  • Turn-on delay time fluctuations in gain-switched AlGaAs/GaAs multiple-quantum-well lasers. Böttcher, E. H.; Ketterer, K.; Bimberg, D. // Journal of Applied Physics;4/1/1988, Vol. 63 Issue 7, p2469 

    Presents a study which determined the turn-on delay time jitter in gain-switched aluminum gallium arsenide or gallium arsenide multiple-quantum-well lasers by measuring the transient fluctuations of the total emitted power. Information on gain switching of injection lasers by short electrical...

  • GaAs/Al[sub x]Ga[sub 1-x]As quantum cascade lasers. Sirtori, Carlo; Kruck, Peter; Barbieri, Stefano; Collot, Philippe; Nagle, Julien; Beck, Mattias; Faist, Je´ro⁁me; Oesterle, Ursula // Applied Physics Letters;12/14/1998, Vol. 73 Issue 24 

    A unipolar injection quantum cascade (QC) laser grown in an AlGaAs/GaAs material system by molecular beam epitaxy, is reported. The active material is a 30 period sequence of injectors/active regions made from Al[sub 0.33]Ga[sub 0.67]As/GaAs-coupled quantum wells. For this device a special...

  • Dynamics of GaAs/AlGaAs microdisk lasers. Luo, K. J.; Xu, J. Y.; Cao, H.; Ma, Y.; Chang, S. H.; Ho, S. T.; Solomon, G. S. // Applied Physics Letters;10/9/2000, Vol. 77 Issue 15 

    Dynamic response of a GaAs/AlGaAs microdisk laser has been experimentally investigated using femtosecond optical pumping. Below the lasing threshold, the delay time of the emission pulse from the microdisk hardly changes with the pump power. Above the lasing threshold, the delay time is...

  • Efficient 30 mW grating surface-emitting lasers. Evans, G. A.; Carlson, N. W.; Hammer, J. M.; Lurie, M.; Butler, J. K.; Palfrey, S. L.; Carr, L. A.; Hawrylo, F. Z.; James, E. A.; Kaiser, C. J.; Kirk, J. B.; Reichert, W. F. // Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1478 

    A surface-emitting AlGaAs second-order distributed Bragg reflector laser using a graded index separate confinement heterostructure with a single quantum well has been fabricated. The surface emitted power is in excess of 30 mW with an external differential quantum efficiency of 20%. These values...

  • High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers. Scha¨fer, F.; Mayer, B.; Reithmaier, J. P.; Forchel, A. // Applied Physics Letters;11/16/1998, Vol. 73 Issue 20 

    The influence of the carrier confinement on the output characteristics of GaInAs/AlGaAs lasers was investigated. To improve the carrier confinement, AlGaAs/GaAs short-period superlattices were used as quantum well barriers. In comparison to lasers with GaAs barriers the structures with the...

  • Room temperature, single mode emission from two-section coupled cavity InGaAs/AlGaAs/GaAs quantum cascade laser. Pierściński, K.; Pierścińska, D.; Pluska, M.; Gutowski, P.; Sankowska, I.; Karbownik, P.; Czerwinski, A.; Bugajski, M. // Journal of Applied Physics;10/7/2015, Vol. 118 Issue 13, p133103-1 

    Room temperature, single mode, pulsed emission from two-section coupled cavity InGaAs/AlGaAs/GaAs quantum cascade laser fabricated by focused ion beam processing is demonstrated and analyzed. The single mode emission is centered at 1059.4 cm–1 (9.44 µm). A side mode suppression ratio...

  • Investigation anisotropic mode splitting induced by electro-optic birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser. Yu, J. L.; Cheng, S. Y.; Lai, Y. F.; Chen, Y. H. // Journal of Applied Physics;Jul2013, Vol. 114 Issue 3, p033511 

    The mode splitting induced by electro-optic birefringence in an P-I-N InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser (VCSEL) has been studied by photocurrent difference spectroscopy (PCDS) at room temperature. The mode splitting, anisotropic broadening width, and the anisotropic...

  • cw surface-emitting grating-coupled GaAs/AlGaAs distributed feedback laser with very narrow beam divergence. Mitsunaga, Kazumasa; Kameya, Masaaki; Kojima, Keisuke; Noda, Susumu; Kyuma, Kazuo; Hamanaka, Koichi; Nakayama, Takashi // Applied Physics Letters;6/22/1987, Vol. 50 Issue 25, p1788 

    Room-temperature cw operation of a GaAs/AlGaAs surface-emitting grating-coupled distributed feedback laser is reported. By using a transverse junction stripe scheme which provides a window structure for the surface-emitted light, cw surface emission having a very narrow beam divergence angle of...

  • Observation of a short optical pulse (<1.3 ps) from a gain-switched quantum well laser. Sogawa, T.; Arakawa, Y.; Tanaka, M.; Sakaki, H. // Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1580 

    Short light pulse generation from an optically pumped GaAs/AlGaAs quantum well laser is measured. The shortest pulse width achieved so far is less than 1.3 ps. In addition, it is found that the pulse from varies randomly even when the same excitation condition, which results from stochastic...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics