TITLE

Selective epitaxial growth of gallium arsenide by molecular beam epitaxy

AUTHOR(S)
Okamoto, A.; Ohata, K.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1512
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAs was selectively grown on GaAs substrates patterned with SiO2 by conventional molecular beam epitaxy (MBE). No growth was found on SiO2, except for small GaAs particles, when the substrate temperature was above 700 °C under 1.2×10-5 Torr arsenic pressure. With the increase in the substrate temperature, the selectivity was better while the growth rate decreased. At 775 °C, no growth occurred, even on GaAs. Selective epitaxial growth of GaAs by MBE is promising for application to device fabrications.
ACCESSION #
9824802

 

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