Thin films of amorphous MoO3 as a negative resist

Gupta, P. K.; Chopra, K. L.
November 1987
Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1527
Academic Journal
Lithographic properties of amorphous MoO3 films exposed to a glow discharge hydrogen plasma have been investigated. It has been observed that the etching rate of an exposed film in alkaline solution is lower compared to an unexposed one, giving rise to a negative tone behavior of the material. The etching characteristics as a function of exposure time and substrate temperature (during exposure) and their correlation with optical transmission have been studied. The contrast (γ) obtained is 4.2.


Related Articles

  • Surface loss probabilities of the dominant neutral precursors for film growth in methane and... Hopf, C.; Letourneur, K. // Applied Physics Letters;6/21/1999, Vol. 74 Issue 25, p3800 

    Investigates the surface loss probabilities of the dominant neutral growth species emanating from methane and acetylene discharges by depositing thin films inside a cavity. Analysis of the deposition profile inside the cavity; Upper limit for the reaction probability for CH[sub 3].

  • Properties of p+ microcrystalline films of SiC:H deposited by conventional rf glow discharge. Goldstein, B.; Dickson, C. R.; Campbell, I. H.; Fauchet, P. M. // Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2672 

    Using a conventional rf glow discharge, we have grown microcrystalline p+ SiC:H films having conductivities 2–2×10-3 (Ω cm)-1 and activation energies 0.05–0.1 eV with carbon concentrations 0–6 at. %, respectively. Increasing the carbon content suppresses the...

  • Refractive index of colored films of molybdenum trioxide. Reyes-Betanzo, C.; Herrera-Perez, J.L. // Journal of Applied Physics;7/1/2000, Vol. 88 Issue 1, p223 

    Describes a technique for measurement of the index of refraction n=n + ik for amorphous thin films of molybdenum trioxide. Growing of the films through thermal evaporation; Data for the reflectivity and differential reflectivity.

  • Plasma enhanced chemical vapor deposition of titanium diboride films. Williams, L. M. // Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p43 

    Thin films of titanium borides were deposited at temperatures from 480 to 650 °C using a glow discharge and feed gases of TiCl4, BCl3, and H2. High quality films have been obtained that are smooth, shiny, and crack-free; they have as-deposited resistivities as low as 200 μΩ cm. Films...

  • A study of hydrogenated amorphous silicon deposited by hot-wall glow discharge. Boulitrop, F.; Proust, N.; Magariño, J.; Criton, E.; Peray, J. F.; Dupre, M. // Journal of Applied Physics;11/1/1985, Vol. 58 Issue 9, p3494 

    Provides information on a study that examined thin films of hydrogenated amorphous silicon deposited in a hot-wall glow discharge apparatus. Methodology of the study; Results and discussion on the study; Conclusion.

  • Spectroscopic ellipsometry study of glow-discharge-deposited thin films of a-Ge:H. Blanco, J. R.; McMarr, P. J.; Vedam, K.; Ross, R. C. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3724 

    Examines thin films of hydrogenated amorphous germanium (a-Ge:H) contents prepared by the glow-discharge process using spectroscopic ellipsometry. Application of Bruggerman effective medium approximation; Differences in the optical properties of thin films; Calculation of the combined response...

  • Preparation of microcrystalline Si1-xCx thin films. Fujii, Yoshihisa; Hatano, Akitsugu; Suzuki, Akira; Yoshida, Masaru; Nakajima, Shigeo // Journal of Applied Physics;2/15/1987, Vol. 61 Issue 4, p1657 

    Presents a study wherein Si[sub1-x]C[subx] thin films were prepared by glow discharge method in a hydrogen-rich atmosphere at low substrate temperature. Superior properties of microcrystalline silicon to hydrogenated amorphous silicon; Measurement of the properties of Si[sub1-x]C[subx] thin...

  • A spectroscopic ellipsometry study of the growth and microstructure of glow-discharge amorphous and microcrystalline silicon films. Kumar, Satyendra; Pandya, D. K.; Chopra, K. L. // Journal of Applied Physics;3/1/1988, Vol. 63 Issue 5, p1497 

    Presents a study which conducted a spectroscopic ellipsometry investigation of the growth and microstructure of glow-discharged amorphous and microcrystalline silicon films. Experimental details and data analysis; Effect of deposition parameters; Description of the growth model.

  • Microvoids in diamond-like amorphous silicon carbide. Carreño, M.N.P.; Pereyra, I.; Fantini, M.C.A.; Takahashi, H.; Landers, R. // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p538 

    The correlation between composition, microstructure, and optical properties of a-Si1-xCx:H thin films with different stoichiometries was established. The alloys were deposited by radio frequency glow discharge under ‘‘starving’’ plasma conditions from mixtures of SiH4...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics