Thin films of amorphous MoO3 as a negative resist

Gupta, P. K.; Chopra, K. L.
November 1987
Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1527
Academic Journal
Lithographic properties of amorphous MoO3 films exposed to a glow discharge hydrogen plasma have been investigated. It has been observed that the etching rate of an exposed film in alkaline solution is lower compared to an unexposed one, giving rise to a negative tone behavior of the material. The etching characteristics as a function of exposure time and substrate temperature (during exposure) and their correlation with optical transmission have been studied. The contrast (γ) obtained is 4.2.


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