Buried heterostructure lasers by silicon implanted, impurity induced disordering

Welch, D. F.; Scifres, D. R.; Cross, P. S.; Streifer, W.
November 1987
Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1401
Academic Journal
Buried heterostructure lasers have been fabricated using impurity induced disordering from an implanted Si diffusion source. The diffused Si extends over 1 μm deep through the active region where the quantum wells are partially homogenized with the barrier and cladding layers to produce a lower refractive index and higher band-gap material. The resulting real refractive index waveguide exhibits single longitudinal and transverse mode behavior to greater than 20 mW for a 4-μm-wide waveguide.


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