TITLE

Buried heterostructure lasers by silicon implanted, impurity induced disordering

AUTHOR(S)
Welch, D. F.; Scifres, D. R.; Cross, P. S.; Streifer, W.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1401
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Buried heterostructure lasers have been fabricated using impurity induced disordering from an implanted Si diffusion source. The diffused Si extends over 1 μm deep through the active region where the quantum wells are partially homogenized with the barrier and cladding layers to produce a lower refractive index and higher band-gap material. The resulting real refractive index waveguide exhibits single longitudinal and transverse mode behavior to greater than 20 mW for a 4-μm-wide waveguide.
ACCESSION #
9824790

 

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