Long wavelength InAs1-xSbx/GaAs detectors prepared by molecular beam epitaxy

Bethea, C. G.; Yen, M. Y.; Levine, B. F.; Choi, K. K.; Cho, A. Y.
November 1987
Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1431
Academic Journal
We prepared InAs0.02Sb0.98 on semi-insulating GaAs substrates with molecular beam epitaxy and measured the temperature dependence of the band gap. Photoconducting detectors were measured and found to have high internal quantum efficiency (47%) and high speed (10 ns).


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