Optically induced regeneration of the stable configuration of the EL2 defect in GaAs

von Bardeleben, H. J.; Bagraev, N. T.; Bourgoin, J. C.
November 1987
Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1451
Academic Journal
Electron paramagnetic resonance measurements on the EL2 defect in semi-insulating GaAs show that after optically induced quenching into the metastable configuration the original stable configuration can be optically regenerated at temperatures below 140 K. We determined the spectral dependence of this regeneration in the 70–140 K temperature range. It is characterized at 90 K by an absorption band centered at (0.8±0.1) eV. However, the spectral dependence is temperature dependent and the thermal activation energy varies with the photon energy.


Related Articles

  • Long Electron Spin Memory Times in Gallium Arsenide. Dzhioev, R. I.; Zakharchenya, B. P.; Korenev, V. L.; Gammon, D.; Katzer, D. S. // JETP Letters;8/10/2001, Vol. 74 Issue 3, p182 

    Extremely long electron spin memory times in GaAs are reported. It was established by the optical orientation method that the spin relaxation time of electrons localized at shallow donors in n-type gallium arsenide (N[sub d] � N[sub A]approx. 10[sup 14]cm[sup �3]) is 290�30 ns at...

  • Selective saturation of paramagnetic defects in electron- and neutron-irradiated GaAs. Goltzene, A.; Meyer, B.; Schwab, C.; Beall, R. B.; Newman, R. C.; Whitehouse, J. E.; Woodhead, J. // Journal of Applied Physics;6/15/1985, Vol. 57 Issue 12, p5196 

    Presents a study which compared electron paramagnetic resonance (EPR) spectra obtained in fast neutron- and electron-irradiated gallium arsenide crystals. Approach used in EPR measurement; Distinction of the saturation behavior of the spectra; Saturation of the quadruplet spectrum occurring at...

  • Thermal detection of electron spin resonance in the persistent photoconductive state of semi-insulating GaAs crystals grown from pyrolytic BN crucibles. Blazey, K. W.; Schneider, J. // Applied Physics Letters;3/31/1986, Vol. 48 Issue 13, p855 

    Thermally detected electron spin resonance (TDESR) has been applied to paramagnetic defects characteristic of semi-insulating (SI) GaAs crystals grown from pyrolytic boron nitride (pBN) crucibles. A strong isotropic TDESR signal near g=2.2 and two anisotropic lines at higher fields were observed...

  • Annealing behavior of strain-induced anion antisites in semi-insulating GaAs. Benakki, S.; Christoffel, E.; Goltzené, A.; Schwab, C.; Wang, Guangyu; Wu, Ju // Journal of Applied Physics;9/15/1989, Vol. 66 Issue 6, p2651 

    Presents information on a study which examined the decay of the anion-antisite-related electron paramagnetic resonance quadruplet as a function of annealing temperature in plastically deformed semi-insulating gallium arsenide. Experimental details; Results and discussion; Conclusions.

  • Electron-paramagnetic-resonance study of the isolated arsenic antisite in electron irradiated.... Rong, F.C.; Buchwald, W.R.; Harmatz, M.; Poindexter, E.H.; Warren, W.L. // Applied Physics Letters;10/28/1991, Vol. 59 Issue 18, p2281 

    Examines the arsenic antisites produced in gallium arsenide by room-temperature electron irradiation. Use of electron paramagnetic resonance; Metastability of the antisite; Determination of the most efficient photon energy for photoquenching.

  • Persistent photoquenching and anion antisite defects in neutron-irradiated GaAs. Goltzene, A.; Meyer, B.; Schwab, C. // Applied Physics Letters;3/6/1989, Vol. 54 Issue 10, p907 

    A potential origin for the reported discrepancies on the low-temperature photosensitivity of particle-induced anion antisites in GaAs is revealed by a systematic study of the relative fraction of photoquenchable paramagnetic As4+Ga centers as a function of neutron fluence and annealing...

  • Formation of AsGa antisite defects in electron-irradiated GaAs. von Bardeleben, H. J.; Bourgoin, J. C. // Journal of Applied Physics;7/15/1985, Vol. 58 Issue 2, p1041 

    Studies the anion antisite As[subGa] formation in electron-irridiated gallium arsenide of various compositions and dopings by means of electron paramagnetic resonance (EPR). Results from combining EPR and infrared absorption of the local mode vibrations; Variation of the As[subGa] concentration...

  • Neon matrix ESR investigation of 69,71GaAs+ generated by the photoionization of laser vaporized GaAs(s). Knight, Lon B.; Petty, J. T. // Journal of Chemical Physics;1/1/1988, Vol. 88 Issue 1, p481 

    The first spectroscopic results are reported for the 69,71GaAs+ cation radical generated by photoionizing GaAs (g) produced by the pulsed laser vaporization of GaAs (s). The GaAs+ cation was trapped in neon matrices at 4 K for ESR investigations which show the ground electronic state to be...

  • Electron spin resonance study of photoluminescent material GaAs:Er,O-Er concentration effect. Fujisawa, Masashi; Asakura, Atsushi; Elmasry, Fatma; Okubo, Susumu; Ohta, Hitoshi; Fujiwara, Yasufumi // Journal of Applied Physics;Mar2011, Vol. 109 Issue 5, p053910 

    Although the photoluminescent material GaAs:Er,O has attracted much attention, the mechanism underlying its luminescence is unclear. To elucidate this mechanism, we have performed X-band electron spin resonance (ESR) measurements for different Er concentration samples. Several anisotropic ESR...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics