TITLE

Lateral optical confinement of the heterostructure semiconductor Raman laser

AUTHOR(S)
Suto, K.; Kimura, T.; Nishizawa, J.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1457
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 μm and Al0.1Ga0.9P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.
ACCESSION #
9824761

 

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