Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures

Baratte, H.; Jackson, T. N.; Solomon, P. M.; LaTulipe, D. C.; Frank, D. J.; Moore, J. S.
November 1987
Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1459
Academic Journal
Electrical measurements of n+-GaAs/π-(Al,Ga)As/π-GaAs semiconductor-insulator-semiconductor (SIS) heterostructure capacitors and field-effect transistors (FET’s) show that the (Al,Ga)As/GaAs heterojunction abruptness is well preserved for an arsine flash anneal of 1 s at temperatures up to ∼900 °C. The heterostructure stability is also preserved for a low-dose silicon implant across the (Al,Ga)As/GaAs heterojunction and subsequent annealing. Arsenic overpressure is found to be necessary, even for short time annealing, to prevent excessive As loss from a GaAs or (Al,Ga)As surface. High mobility enhance–deplete heterostructure SISFET’s with sharp current versus voltage (I-V) turn-on characteristics have been fabricated using ion implantation and arsine flash anneal.


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