TITLE

Temperature dependence of hydrogen vibrational modes in passivated boron-doped silicon

AUTHOR(S)
Stutzmann, M.; Herrero, C. P.
PUB. DATE
November 1987
SOURCE
Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1413
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Vibrational spectra of hydrogen and deuterium in the passivated layer of bulk boron doped crystalline silicon are investigated by Raman scattering. The temperature dependence of line positions and widths is measured in the range 5–450 K and for H(D) concentrations between 1×1019 and 1×1020 cm-3. A strong correlation between shift and broadening of the Raman lines is observed for all samples.
ACCESSION #
9824745

 

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