Dielectrically isolated silicon-on-insulator islands by masked oxygen implantation

Davis, J. R.; Robinson, A.; Reeson, K. J.; Hemment, P. L. F.
November 1987
Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1419
Academic Journal
A method of forming dielectrically isolated silicon-on-insulator device islands by using a thin patterned masking layer during implantation of high doses of oxygen into silicon is described. Due to energy loss in the masking layer, the oxygen ions synthesize both a surface oxide in the masked field regions and, simultaneously, a buried oxide in the unmasked windows. The field oxide is contiguous with the buried oxide under the device islands. This method of achieving total dielectric isolation has potential application in the fabrication of high-density silicon-on-insulator circuits with a very flat topography.


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