Hot-electron transport in GaAs in the presence of a magnetic field

Beton, P. H.; Long, A. P.; Kelly, M. J.
November 1987
Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1425
Academic Journal
We describe the results of the incorporation of magnetic field effects into the Monte Carlo simulation of hot electrons traversing narrow regions of heavily doped GaAs. In addition to accounting for the experimentally observed suppression of the ballistic contribution to the hot-electron spectrum, a further analysis allows us to infer the spread in transverse energy of the injected hot electrons.We attribute this loss of collimation to scattering by unscreened ionized impurities in the depletion region which is set up when a hot-electron injector is forward biased.


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