InP/InGaAsP/InGaAs avalanche photodiodes with 70 GHz gain-bandwidth product

Campbell, J. C.; Tsang, W. T.; Qua, G. J.; Bowers, J. E.
November 1987
Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1454
Academic Journal
A wide bandwidth (8 GHz) and a high gain-bandwidth product (70 GHz) have been achieved with InP/InGaAsP/InGaAs avalanche photodiodes (APD’s) grown by chemical beam epitaxy. These APD’s also exhibit low dark current (<150 nA at 90% breakdown), good external quantum efficiency (>90% at λ=1.3 μm), and high avalanche gain (M0[bar_over_tilde:_approx._equal_to]40).


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