Low-threshold (∼600 A/cm2 at room temperature) GaAs/AlGaAs lasers on Si (100)

Chen, H. Z.; Ghaffari, A.; Wang, H.; Morkoç, H.; Yariv, A.
October 1987
Applied Physics Letters;10/26/1987, Vol. 51 Issue 17, p1320
Academic Journal
Low-threshold graded-refractive-index GaAs/AlGaAs laser structures were grown on Si (100) by molecular beam epitaxy and tested at room temperature under a probe station. Broad area devices having widths of 110–120 μm and cavity lengths of ∼500–1210 μm exhibited threshold current densities as low as 600 A/cm2 and total slope efficiencies of as high as 0.75 W/A. The thresholds fell in the range of 600–1000 A/cm2 in three different wafers, and it is assumed that the quality of the facets accounts for most of the spread in results.


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