Contrast enhancement pattern transfer etching of phosphorus-doped polycrystalline silicon

Hayasaka, N.; Nakahara, H.; Okano, H.; Horiike, Y.
October 1987
Applied Physics Letters;10/26/1987, Vol. 51 Issue 17, p1328
Academic Journal
Pattern transfer etching of heavily phosphorus-doped polycrystalline silicon has been developed using a KrF excimer laser through a 1:1 reflective optics and a new contrast enhancement scheme employing methylmethacrylate. With laser power at more than 0.5 mJ/cm2 and Cl2 gas as etchant, etching of n+ poly-Si proceeded in the illuminated (bright) region, while the dark region was protected from etching by a polymer film formed from methylmethacrylate. As a result, a 0.9-μm resolution pattern has been achieved.


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